AFM and STM studies on In2O3 and ITO thin films deposited by atomic layer epitaxy

Applied Surface Science

Volumn 99, Issue 2, 1996, Pages 91-98

  Asikainen, Timo ^a   Ritala, Mikko ^a   Leskelä, Markku ^a   Prohaska, Thomas ^b   Friedbacher, Gernot ^b   Grasserbauer, Manfred ^b  

^a UNIVERSITY OF HELSINKI   (Finland)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; FILM GROWTH; INDIUM COMPOUNDS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SURFACE ROUGHNESS; TIN COMPOUNDS;

ATOMIC LAYER EPITAXY; FILM THICKNESS; INDIUM TRIOXIDE; TIN DIOXIDE;

THIN FILMS;

EID: 0030165990     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00110-9     Document Type: Article

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