SCOPUS 정보 검색 플랫폼

Volumn 387, Issue , 2014, Pages 91-95

Characteristics of GaN-based LEDs using Ga-doped or In-doped ZnO transparent conductive layers grown by atomic layer deposition

(10) Yen, Kuo Yi a Chiu, Chien Hua a Hsiao, Chi Ying a Li, Chun Wei a Chou, Chien Hua a Lo, Ko Ying a Chen, Tzu Pei a Lin, Chu Hsien a Lin, Tai Yuan b Gong, Jyh Rong a

a NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

b NATIONAL TAIWAN OCEAN UNIVERSITY (Taiwan)

Author keywords

A3. Atomic layer epitaxy; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B1. Oxides; B1. Semiconducting II VI materials; B3. Light emitting diodes

Indexed keywords

CONDUCTING LAYERS; GADOPED ZNO (GZO); LIGHT EXTRACTION; LIGHT OUTPUT POWER; OPERATING CONDITION; SEMICONDUCTING II-VI MATERIALS; SPECIFIC CONTACT RESISTANCES; TRANSPARENT CONDUCTIVE LAYER;

ANNEALING; ATOMIC LAYER DEPOSITION; CONDUCTIVE FILMS; DEPOSITION; GALLIUM NITRIDE; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; REFRACTIVE INDEX; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 84888342936 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2013.10.042 Document Type: Article

Times cited : (13)

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