Enhanced growth rate in atomic layer epitaxy of indium oxide and indium-tin oxide thin films

Electrochemical and Solid-State Letters

Volumn 1, Issue 3, 1998, Pages 156-157

  Ritala, Mikko ^a,b   Asikainen, Timo ^a,c   Leskelä, Markku ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

^b ELECTROCHEMICAL SOCIETY   (Finland)

^c Microchemistry Ltd   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; FILM GROWTH; HYDROGEN PEROXIDE; SEMICONDUCTING INDIUM COMPOUNDS;

ATOMIC LAYER EPITAXY; INDIUM TIN OXIDE;

SEMICONDUCTING FILMS;

EID: 0032167180     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390669     Document Type: Article

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