Direct band gap narrowing in highly doped Ge

Applied Physics Letters

Volumn 102, Issue 15, 2013, Pages

  Camacho Aguilera, Rodolfo ^a   Han, Zhaohong ^a   Cai, Yan ^a   Kimerling, Lionel C ^a   Michel, Jurgen ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP NARROWING; DIRECT BAND GAP; FIRST ORDER; LINEAR RELATIONSHIPS; PHENOMENOLOGICAL MODELS; PHOTOLUMINESCENCE MEASUREMENTS; SPECTRUM PEAKS; TWO PARAMETER;

CARRIER CONCENTRATION; GERMANIUM;

ENERGY GAP;

EID: 84877139509     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4802199     Document Type: Article

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