Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)

Journal of Applied Physics

Volumn 109, Issue 10, 2011, Pages

  Roucka, Radek ^a   Beeler, Richard ^a   Mathews, Jay ^a   Ryu, Mee Yi ^b   Kee Yeo, Yung ^c   Menéndez, José ^a   Kouvetakis, John ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Kangwon National University   (South Korea)

^c Air Force Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1550 NM; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DETECTOR MATERIALS; DOPANT LEVELS; HIGH GROWTH; HIGH GROWTH RATE; IV CHARACTERISTICS; METAL-OXIDE; PROCESSING TEMPERATURE; RESPONSIVITY; SMOOTH LAYER; SN CONCENTRATION; SN-DOPED; THREADING DEFECTS;

DETECTORS; GERMANIUM; PROCESSING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON ALLOYS; TENSILE STRAIN; TIN;

TIN ALLOYS;

EID: 79958861783     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3592965     Document Type: Conference Paper

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