Electronic structure of Snx Ge1-x alloys for small Sn compositions: Unusual structural and electronic properties

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Chibane, Y ^a,b   Ferhat, M ^a  

^a UNIVERSITY OF ORAN   (Algeria)

^b UNIVERSITÉ DES SCIENCES ET DE LA TECHNOLOGIE D ORAN MOHAMED BOUDIAF   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

AUGMENTED PLANE WAVES; BAND GAP REDUCTION; BAND GAPS; CHARGE EXCHANGES; CHEMICAL ENERGY; CRITICAL COMPOSITION; DIRECT BAND GAP; INDIRECT BAND GAP; LATTICE PARAMETERS; LOCAL ENVIRONMENTS; LOCAL ORBITALS; RELATIVE CONTRIBUTION; ROOM TEMPERATURE; STRUCTURAL ENERGIES; THREE COMPONENT; VEGARD'S LAW; VIRTUAL CRYSTAL APPROXIMATION; VOLUME DEFORMATION;

ALLOYS; CHARGE TRANSFER; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELD MEASUREMENT; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GERMANIUM; ION EXCHANGE; LATTICE CONSTANTS; LATTICE MISMATCH; LOCAL DENSITY APPROXIMATION; OPTICAL BAND GAPS; THERMODYNAMIC PROPERTIES; TIN;

TIN ALLOYS;

EID: 77949765169     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3326162     Document Type: Article

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