Bandgap changes in excited intrinsic (heavily doped) Si and Ge semiconductors

Physica B: Condensed Matter

Volumn 405, Issue 4, 2010, Pages 1139-1149

  Van Cong, H ^a  

^a UNIVERSITÉ DE PERPIGNAN   (France)

Author keywords

Bandgap narrowing; Electrical bandgap; Fermi energy; Ge; Intrinsic bandgap; Optical bandgap; Si; SiGe

Indexed keywords

ENERGY GAP; FERMI LEVEL; GERMANIUM; OPTICAL BAND GAPS; OPTICAL DATA PROCESSING; POTENTIAL ENERGY; SEMICONDUCTING SILICON; SILICON;

BAND GAP NARROWING; CARRIER-CARRIER INTERACTION; ELECTRON HOLE; FERMI-DIRAC STATISTICS; MAJORITY CARRIERS; OPTICAL MEASUREMENT; SCREENING EFFECT; SIGE;

SI-GE ALLOYS;

EID: 74149083164     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.11.016     Document Type: Article

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