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Applied Physics Letters

Volumn 96, Issue 9, 2010, Pages

Competitiveness between direct and indirect radiative transitions of Ge

(7) Cheng, T H a Ko, C Y a Chen, C Y a Peng, K L a Luo, G L b Liu, C W a,b Tseng, H H c

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b NATIONAL NANO DEVICE LABORATORIES (Taiwan)

c Texas State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON POPULATION; INDIRECT TRANSITION; INJECTION CURRENT DENSITY; NEAR ROOM TEMPERATURE; PHOTOLUMINESCENCE SPECTRUM; RADIATIVE RECOMBINATION; RADIATIVE TRANSITION RATE; RADIATIVE TRANSITIONS; RELATIVE INTENSITY;

COMPETITION; ELECTROLUMINESCENCE; GERMANIUM; LIGHT; PHOTOLUMINESCENCE;

OPTICAL PUMPING;

EID: 77949409001 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3352048 Document Type: Article

Times cited : (61)

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