Influence of defects and interface on radiative transition of Ge

Applied Physics Letters

Volumn 98, Issue 14, 2011, Pages

  Jan, S R ^a   Chen, C Y ^a   Lee, C H ^a   Chan, S T ^a   Peng, K L ^a   Liu, C W ^a,b   Yamamoto, Y ^c   Tillack, B ^c,d  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS   (Germany)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BAND TRANSITIONS; DIRECT TRANSITION; INDIRECT TRANSITION; INTEGRATED INTENSITIES; PHOTOLUMINESCENCE INTENSITIES; RADIATIVE TRANSITIONS;

PHOTOLUMINESCENCE; SILICON; SURFACE DEFECTS; SURFACE ROUGHNESS;

GERMANIUM;

EID: 79954477584     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3571439     Document Type: Article

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