Photoluminescence study of Ge containing crystal defects

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 4, 2011, Pages 754-759

  Kittler, Martin ^a,b   Arguirov, Tzanimir ^a,b   Oehme, Michael ^c   Yamamoto, Yuji ^a   Tillack, Bernd ^a,d   Abrosimov, Nikolai V ^e  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF STUTTGART   (Germany)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^e LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

CVD; defects; Ge; luminescence; MBE

Indexed keywords

CRYSTALLINE GE; CVD; DECISIVE PROCESS; FINE STRUCTURES; GE; LONGITUDINAL ACOUSTIC PHONONS; LOWER ENERGIES; LUMINESCENCE INTENSITY; MBE; MULTI-PHONON ABSORPTION; PEAK POSITION; PHONON ASSISTED PROCESS; PHOTOLUMINESCENCE SPECTRUM; PL SPECTRA; ROOM TEMPERATURE; SI SUBSTRATES; SUB-PEAKS; TEMPERATURE DEPENDENCE;

ABSORPTION; CRYSTAL DEFECTS; PHONONS; PHOTOLUMINESCENCE; SILICON; TENSILE STRAIN;

GERMANIUM;

EID: 79954427684     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201084010     Document Type: Article

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