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Applied Physics Letters

Volumn 100, Issue 10, 2012, Pages

Investigation of the direct band gaps in Ge 1-xSn x alloys with strain control by photoreflectance spectroscopy

(6) Lin, Hai a Chen, Robert a Lu, Weisheng b,c Huo, Yijie a Kamins, Theodore I a Harris, James S a

a Stanford University (United States)

b UNIVERSITY OF STRATHCLYDE (United Kingdom)

c STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; BOWING PARAMETERS; DEFORMATION POTENTIAL; DIRECT BAND GAP; HEAVY-HOLE BANDS; MATERIAL PARAMETER; PHOTOREFLECTANCE; PHOTOREFLECTANCE SPECTROSCOPY; ROOM TEMPERATURE; TRANSITION ENERGY;

ALLOYS; CERIUM ALLOYS; ENERGY GAP; GERMANIUM; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; TIN;

TIN ALLOYS;

EID: 84863337754 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3692735 Document Type: Article

Times cited : (121)

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