SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B

Volumn 28, Issue 3, 2010, Pages

Engineering of threshold voltages in molecular beam epitaxy-grown Al 2 O3 / Ga2 O3 (Gd2 O 3) / In0.2 Ga0.8 As

(9) Wu, Y D a Lin, T D a Chiang, T H a Chang, Y C a Chiu, H C a Lee, Y J a Hong, M a Lin, C A a Kwo, J a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; GALLIUM COMPOUNDS; METALS; MOLECULAR BEAM EPITAXY; MOS CAPACITORS; OXIDE SEMICONDUCTORS; RAPID THERMAL ANNEALING; THRESHOLD VOLTAGE;

CAPACITANCE-VOLTAGE CHARACTERISTICS; CAPACITANCE-VOLTAGE CURVE; DIFFERENT-METAL GATES; FLAT-BAND VOLTAGE; FLAT-BAND VOLTAGE SHIFT; FREQUENCY DISPERSION; METAL-DIELECTRIC INTERFACE; METAL-OXIDE- SEMICONDUCTORCAPACITORS; MOLECULAR-BEAM EPITAXY; P-TYPE;

ALUMINUM COMPOUNDS;

EID: 84905950827 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3271141 Document Type: Conference Paper

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.