Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric

Solid-State Electronics

Volumn 52, Issue 10, 2008, Pages 1615-1618

  Chen, C P ^a   Lin, T D ^a   Lee, Y J ^a   Chang, Y C ^a   Hong, M ^a   Kwo, J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

GaAs; High dielectric; InGaAs; Metal gate; MOSFET

Indexed keywords

METALS; SEMICONDUCTING INDIUM;

GAAS; INGAAS; METAL GATE; METAL-OXIDE SEMICONDUCTORS; MOSFET; N -CHANNEL; SELF ALIGNED PROCESSES; SELF-ALIGNED;

FIELD EFFECT TRANSISTORS;

EID: 50849107353     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.006     Document Type: Article

References (24)

1. Hong M., Passlack M., Mannerts J.P., Kwo J., Chu S.N.G., Moriya N., et al. J Vac Sci Technol B 14 3 (1996) 2297
2. Kwo J., Murphy D.W., Hong M., Opila R.L., Mannaerts J.P., Sergent A.M., et al. Appl Phys Lett 75 8 (1999) 1116
3. Hong M., Lu Z.H., Kwo J., Mannerts J.P., Krajewski J.J., hsieh K.C., et al. Appl Phys Lett 76 3 (2000) 312
4. Passlack M., Hong M., and Mannerts J.P. Appl Phys Lett 68 8 (1996) 1099
5. Ye P.D., Wilk G.D., Yang B., Kwo J., Gossmann H.J.L., Hong M., et al. Appl Phys Lett 84 (2004) 434
6. Huang M.L., Chang Y.C., Chang C.H., Lee Y.J., Chang P., Kwo J., et al. Appl Phys Lett 87 (2005) 252104
7. Huang M.L., Chang Y.C., Chang C.H., Lin T.D., Kwo J., Wu T.B., et al. Appl Phys Lett 89 (2006) 012903
8. Xuan Y., Lin H.C., Ye P.D., and Wilk G.D. Appl Phys Lett 88 (2006) 263518
9. Xuan Y., Lin H.C., and Ye P.D. IEEE Trans on Electron Dev 54 8 (2007) 1811
10. Chang C.H., Chiou Y.K., Chang Y.C., Lee K.Y., Lin T.D., Wu T.B., et al. Appl Phys Lett 89 (2006) 242911
11. Chang Y.C., Huang M.L., Lee K.Y., Lee Y.J., Lin T.D., Hong M., et al. Appl Phys Lett 92 (2008) 072901
12. Ren F., Hong M., Hobson W.S., Kuo J.M., Lothian J.R., Mannaerts J.P., et al. Solid-State Electron 41 11 (1997) 1751
13. Wang Y.C., Hong M., Kuo J.M., Mannaerts J.P., Kwo J., Tsai H.S., et al. Mat Res Soc Symp Proc 573 (1999) 219
14. Huang Y.L., Chang P., Yang Z.K., Lee Y.J., Lee H.Y., Liu H.J., et al. Appl Phys Lett 86 17 (2005) 191905
15. Chen C.P., Lee Y.J., Chang Y.C., Yang Z.K., Hong M., Kwo J., et al. J Appl Phys 100 (2006) 104052
16. Ren F., Hong M., Mannaerts J.P., Lothian J.P., Kwo J., and Cho A.Y. J Electronchem Soc 144 (1997) L239
17. Schroder D.K. Semiconductor material and device characterization (1998), John Wiley & Sons
18. Hong M., Marcus M.A., Kwo J., Mannaerts J.P., Sergent A.M., Chou L.J., et al. J Vac Sci Technol B 16 3 (1998) 1395
19. Hill R.J.W., Moran D.A.J., Li X., Zhou H., Macintyre D., Thoms S., et al. IEEE Electron Dev Lett 28 12 (2007) 1080
20. Xuan Y., Wu Y.Q., Lin H.C., Shen T., and Ye P.D. IEEE Electron Dev Lett 28 11 (2007) 935
21. Xuan Y., Ye P.D., and Shen T. Appl Phys Lett 91 (2007) 232107
22. Ren F., Kuo J.M., Hong M., Hobson W.S., Lothian J.R., Lin J., et al. IEEE Electron Dev Lett 19 8 (1998) 309
23. Zheng J.-F., Tsai W., Lin T.D., Lee Y.J., Chen C.P., Hong M., et al. Appl Phys Lett 91 (2007) 223502
24. Shiu K.H., Chiang T.H., Chang P., Tung L.T., Hong M., Kwo J., et al. Appl Phys Lett 92 (2008) 172904