SCOPUS 정보 검색 플랫폼

Volumn 2, Issue 29, 2014, Pages 5805-5811

Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process

(11) Kim, Woo Hee a,b Oh, Il Kwon a Kim, Min Kyu a Maeng, Wan Joo a Lee, Chang Wan a Lee, Gyeongho a Lansalot Matras, Clement a Noh, Wontae a Thompson, David c Chu, David c Kim, Hyungjun a

a Yonsei University (South Korea)

b Stanford University (United States)

c APPLIED MATERIALS INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIELECTRIC PROPERTIES; FILM GROWTH; LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTOR DOPING; THIN FILMS;

ELECTRICAL CHARACTERIZATION; FILM PROPERTIES; FLAT-BAND VOLTAGE; GROWTH CHARACTERISTIC; SIMS DEPTH PROFILE; STOICHIOMETRIC FILMS; THEORETICAL ESTIMATION; TRIMETHYLBORATE;

ATOMIC LAYER DEPOSITION;

EID: 84903999516 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c4tc00648h Document Type: Article

Times cited : (26)

References (35)

1
- 33744822492
- J. Goldberger A. I. Hochbaum R. Fan P. Yang Nano Lett. 2006 6 973
- (2006) Nano Lett. , vol.6 , pp. 973
- Goldberger, J.¹ Hochbaum, A.I.² Fan, R.³ Yang, P.⁴

2
- 63449086454
- P. Zhang T. S. Mayer T. N. Jackson ACS Nano 2007 1 6
- (2007) ACS Nano , vol.1 , pp. 6
- Zhang, P.¹ Mayer, T.S.² Jackson, T.N.³

3
- 29044440093
- D. Hisamoto W.-C. Lee J. Kedzierski H. Takeuchi K. Asano C. Kuo E. Anderson T.-J. King J. Bokor C. Hu IEEE Trans. Electron Devices 2000 47 2320
- (2000) IEEE Trans. Electron Devices , vol.47 , pp. 2320
- Hisamoto, D.¹ Lee, W.-C.² Kedzierski, J.³ Takeuchi, H.⁴ Asano, K.⁵ Kuo, C.⁶ Anderson, E.⁷ King, T.-J.⁸ Bokor, J.⁹ Hu, C.¹⁰

4
- 10644230219
- J. Kedzierski M. Ieong T. Kanarsky Y. Zhang H. S. Wong IEEE Electron Device Lett. 2004 51 2115
- (2004) IEEE Electron Device Lett. , vol.51 , pp. 2115
- Kedzierski, J.¹ Ieong, M.² Kanarsky, T.³ Zhang, Y.⁴ Wong, H.S.⁵

5
- 2942746700
- W.-J. Cho C.-G. Ahn K. Im J.-H. Yang J. Oh I.-B. Baek S. Lee IEEE Electron Device Lett. 2004 25 366
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 366
- Cho, W.-J.¹ Ahn, C.-G.² Im, K.³ Yang, J.-H.⁴ Oh, J.⁵ Baek, I.-B.⁶ Lee, S.⁷

6
- 56349151452
- K. Tsutsui T. Matsuda M. Watanabe C.-G. Jin Y. Sasaki B. Mizuno E. Ikenaga K. Kakushima P. Ahmet T. Maruizumi J. Appl. Phys. 2008 104 093709
- (2008) J. Appl. Phys. , vol.104 , pp. 093709
- Tsutsui, K.¹ Matsuda, T.² Watanabe, M.³ Jin, C.-G.⁴ Sasaki, Y.⁵ Mizuno, B.⁶ Ikenaga, E.⁷ Kakushima, K.⁸ Ahmet, P.⁹ Maruizumi, T.¹⁰

7
- 44649160005
- S. Ingole P. Aella P. Manandhar S. B. Chikkannanavar E. A. Akhadov D. J. Smith S. T. Picraux J. Appl. Phys. 2008 103 104302
- (2008) J. Appl. Phys. , vol.103 , pp. 104302
- Ingole, S.¹ Aella, P.² Manandhar, P.³ Chikkannanavar, S.B.⁴ Akhadov, E.A.⁵ Smith, D.J.⁶ Picraux, S.T.⁷

8
- 38049062506
- W.-H. Kim S.-J. Park J.-Y. Son H. Kim Nanotechnology 2008 19 045302
- (2008) Nanotechnology , vol.19 , pp. 045302
- Kim, W.-H.¹ Park, S.-J.² Son, J.-Y.³ Kim, H.⁴

9
- 79951966665
- W.-H. Kim K. Heo Y. K. Lee T.-M. Chung C. G. Kim S. Hong J. Heo H. Kim J. Electrochem. Soc. 2011 158 D1
- (2011) J. Electrochem. Soc. , vol.158 , pp. 1
- Kim, W.-H.¹ Heo, K.² Lee, Y.K.³ Chung, T.-M.⁴ Kim, C.G.⁵ Hong, S.⁶ Heo, J.⁷ Kim, H.⁸

10
- 80051711561
- W.-H. Kim M.-K. Kim W. J. Maeng J. Gatineau V. Pallem C. Dussarrat A. Noori D. Thompson S. Chu H. Kim J. Electrochem. Soc. 2011 158 G169
- (2011) J. Electrochem. Soc. , vol.158 , pp. 169
- Kim, W.-H.¹ Kim, M.-K.² Maeng, W.J.³ Gatineau, J.⁴ Pallem, V.⁵ Dussarrat, C.⁶ Noori, A.⁷ Thompson, D.⁸ Chu, S.⁹ Kim, H.¹⁰

11
- 84870045754
- R. Methaapanon S. M. Geyer S. F. Bent J. Mater. Chem. 2012 22 25154
- (2012) J. Mater. Chem. , vol.22 , pp. 25154
- Methaapanon, R.¹ Geyer, S.M.² Bent, S.F.³

12
- 84873690545
- H.-B.-R. Lee S. H. Baeck T. F. Jaramillo S. F. Bent Nano Lett. 2013 13 457
- (2013) Nano Lett. , vol.13 , pp. 457
- Lee, H.-B.-R.¹ Baeck, S.H.² Jaramillo, T.F.³ Bent, S.F.⁴

13
- 84891359914
- J.-G. Song J. Park W. Lee T. Choi H. Jung C. W. Lee S.-H. Hwang J. M. Myoung J.-H. Jung S.-H. Kim C. Lansalot-Matras H. Kim ACS Nano 2013 7 11333
- (2013) ACS Nano , vol.7 , pp. 11333
- Song, J.-G.¹ Park, J.² Lee, W.³ Choi, T.⁴ Jung, H.⁵ Lee, C.W.⁶ Hwang, S.-H.⁷ Myoung, J.M.⁸ Jung, J.-H.⁹ Kim, S.-H.¹⁰ Lansalot-Matras, C.¹¹ Kim, H.¹²

14
- 84894440681
- S.-G. Park T. Y. Jeon H. C. Jeon S.-M. Yang J.-D. Kwon C.-W. Mun B. Cho C. S. Kim D.-H. Kim J. Mater. Chem. C 2014 2 1957
- (2014) J. Mater. Chem. C , vol.2 , pp. 1957
- Park, S.-G.¹ Jeon, T.Y.² Jeon, H.C.³ Yang, S.-M.⁴ Kwon, J.-D.⁵ Mun, C.-W.⁶ Cho, B.⁷ Kim, C.S.⁸ Kim, D.-H.⁹

15
- 84896854658
- C. Ozgit-Akgun E. Goldenberg A. K. Okyay N. Biyikli J. Mater. Chem. C 2014 2 2123
- (2014) J. Mater. Chem. C , vol.2 , pp. 2123
- Ozgit-Akgun, C.¹ Goldenberg, E.² Okyay, A.K.³ Biyikli, N.⁴

16
- 84896384079
- S. Y. Lee H. K. Kim I.-H. Yu J.-H. Lee C. S. Hwang J. Mater. Chem. C 2014 2 2558
- (2014) J. Mater. Chem. C , vol.2 , pp. 2558
- Lee, S.Y.¹ Kim, H.K.² Yu, I.-H.³ Lee, J.-H.⁴ Hwang, C.S.⁵

17
- 33745736898
- M. Putkonen L. Niinistö Thin Solid Films 2006 514 145
- (2006) Thin Solid Films , vol.514 , pp. 145
- Putkonen, M.¹ Niinistö, L.²

18
- 84869046014
- B. Kalkofen V. M. Mothukuru M. Lisker E. P. Burte ECS Trans. 2012 45 55
- (2012) ECS Trans. , vol.45 , pp. 55
- Kalkofen, B.¹ Mothukuru, V.M.² Lisker, M.³ Burte, E.P.⁴

19
- 84897569507
- W.-H. Kim M. K. Kim I. K. Oh W. J. Maeng T. Cheon S. H. Kim A. Noori D. Thompson S. Chu H. Kim J. Am. Ceram. Soc. 2014 97 1164
- (2014) J. Am. Ceram. Soc. , vol.97 , pp. 1164
- Kim, W.-H.¹ Kim, M.K.² Oh, I.K.³ Maeng, W.J.⁴ Cheon, T.⁵ Kim, S.H.⁶ Noori, A.⁷ Thompson, D.⁸ Chu, S.⁹ Kim, H.¹⁰

20
- 77957706011
- W.-H. Kim W. J. Maeng K.-J. Moon J.-M. Myoung H. Kim Thin Solid Films 2010 519 362
- (2010) Thin Solid Films , vol.519 , pp. 362
- Kim, W.-H.¹ Maeng, W.J.² Moon, K.-J.³ Myoung, J.-M.⁴ Kim, H.⁵

21
- 77951575617
- W. J. Maeng W.-H. Kim H. Kim J. Appl. Phys. 2010 107 074109
- (2010) J. Appl. Phys. , vol.107 , pp. 074109
- Maeng, W.J.¹ Kim, W.-H.² Kim, H.³

22
- 79952639887
- B. Besancon C. Weiland V. Omarjee V. P. Rao C. Dussarrat ECS Trans. 2010 33 171
- (2010) ECS Trans. , vol.33 , pp. 171
- Besancon, B.¹ Weiland, C.² Omarjee, V.³ Rao, V.P.⁴ Dussarrat, C.⁵

23
- 18744376979
- Y. Kim J. Koo J. Han S. Choi H. Jeon C.-G. Park J. Appl. Phys. 2002 92 5443
- (2002) J. Appl. Phys. , vol.92 , pp. 5443
- Kim, Y.¹ Koo, J.² Han, J.³ Choi, S.⁴ Jeon, H.⁵ Park, C.-G.⁶

24
- 33645726826
- W. J. Maeng H. Kim Electrochem. Solid-State Lett. 2006 9 G191
- (2006) Electrochem. Solid-State Lett. , vol.9 , pp. 191
- Maeng, W.J.¹ Kim, H.²

25
- 0003708256
- Physical Electronics Eden Prairie, MN
- J. F. Moulder, J. Chastain and R. C. King, Handbook of X-ray photoelectron spectroscopy: a reference book of standard spectra for identification and interpretation of XPS data, Physical Electronics Eden Prairie, MN, 1995
- (1995) Handbook of X-ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data
- Moulder, J.F.¹ Chastain, J.² King, R.C.³

26
- 4544229453
- O. M. Moon B. C. Kang S. B. Lee J. H. Boo Thin Solid Films 2004 464 164
- (2004) Thin Solid Films , vol.464 , pp. 164
- Moon, O.M.¹ Kang, B.C.² Lee, S.B.³ Boo, J.H.⁴

27
- 33745761237
- P. A. Timson C. A. Hogarth Thin Solid Films 1971 8 R33
- (1971) Thin Solid Films , vol.8 , pp. 33
- Timson, P.A.¹ Hogarth, C.A.²

28
- 84880807758
- H. K. Kim I.-H. Yu J. H. Lee C. S. Hwang ACS Appl. Mater. Interfaces 2013 5 6769
- (2013) ACS Appl. Mater. Interfaces , vol.5 , pp. 6769
- Kim, H.K.¹ Yu, I.-H.² Lee, J.H.³ Hwang, C.S.⁴

29
- 20544447769
- S.-C. Song Z. Zhang B. H. Lee IEEE Electron Device Lett. 2005 26 366
- (2005) IEEE Electron Device Lett. , vol.26 , pp. 366
- Song, S.-C.¹ Zhang, Z.² Lee, B.H.³

30
- 33845241461
- S.-C. Song G. L. Zhang S. H. Bae P. Kirsch P. Majhi R. Choi B. H. Lee ECS Trans. 2006 1 609
- (2006) ECS Trans. , vol.1 , pp. 609
- Song, S.-C.¹ Zhang, G.L.² Bae, S.H.³ Kirsch, P.⁴ Majhi, P.⁵ Choi, R.⁶ Lee, B.H.⁷

31
- 38949106119
- Q.-Q. Sun L. Dong Y. Shi H. Liu S.-J. Ding D. W. Zhang Appl. Phys. Lett. 2008 92 052907
- (2008) Appl. Phys. Lett. , vol.92 , pp. 052907
- Sun, Q.-Q.¹ Dong, L.² Shi, Y.³ Liu, H.⁴ Ding, S.-J.⁵ Zhang, D.W.⁶

32
- 64149125385
- K. Kita A. Toriumi Appl. Phys. Lett. 2009 94 132902
- (2009) Appl. Phys. Lett. , vol.94 , pp. 132902
- Kita, K.¹ Toriumi, A.²

33
- 77749297935
- W. J. Maeng W.-H. Kim J. H. Koo S. J. Lim C.-S. Lee T. Lee H. Kim Appl. Phys. Lett. 2010 96 082905
- (2010) Appl. Phys. Lett. , vol.96 , pp. 082905
- Maeng, W.J.¹ Kim, W.-H.² Koo, J.H.³ Lim, S.J.⁴ Lee, C.-S.⁵ Lee, T.⁶ Kim, H.⁷

34
- 84898450407
- W.-H. Kim N.-I. Lee J.-H. Lee K.-H. Kim ACS Appl. Mater. Interfaces 2014 6 5199
- (2014) ACS Appl. Mater. Interfaces , vol.6 , pp. 5199
- Kim, W.-H.¹ Lee, N.-I.² Lee, J.-H.³ Kim, K.-H.⁴

35
- 36849130600
- C. S. Fuller J. A. Ditzenberger J. Appl. Phys. 1956 27 544
- (1956) J. Appl. Phys. , vol.27 , pp. 544
- Fuller, C.S.¹ Ditzenberger, J.A.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.