Thickness and post-annealing effects of the sputtered La-capping layer inserted between the TiN gate and Hf-based dielectrics

ACS Applied Materials and Interfaces

Volumn 6, Issue 7, 2014, Pages 5199-5205

  Kim, Woo Hee ^a,b   Lee, Nae In ^a   Lee, Jong Ho ^a   Kim, Kug Hwan ^a  

^a SAMSUNG Electronics   (South Korea)

^b Stanford University   (United States)

Author keywords

effective work function; Hf based gate dielectrics; high ; La capping layer; MOS capacitors; thin films

Indexed keywords

DIELECTRIC MATERIALS; HAFNIUM; HAFNIUM OXIDES; MOS CAPACITORS; PHOTOELECTRONS; SCHEMATIC DIAGRAMS; THERMOANALYSIS; THIN FILMS; TIN OXIDES; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

EFFECTIVE WORK FUNCTION; ENERGY-BAND DIAGRAM; EQUIVALENT OXIDE THICKNESS; FLAT-BAND VOLTAGE; HF-BASED DIELECTRICS; LA-CAPPING LAYER; POST-ANNEALING EFFECT; THERMO DYNAMIC ANALYSIS;

GATE DIELECTRICS;

EID: 84898450407     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am500490u     Document Type: Article

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