Comparison of HfSiOx thin films deposited by ALD with moisture using different silicon sources

ECS Transactions

Volumn 33, Issue 3, 2010, Pages 171-182

  Besancon, B ^a   Weiland, C ^a   Omarjee, V ^a   Rao, V P ^a   Dussarrat, C ^a  

^a AIR LIQUIDE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DEPOSITS; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LOW-K DIELECTRIC; MOISTURE; REDUCING AGENTS; SILICA; SILICATES; SILICON; SILICON OXIDES;

ALKOXIDES; HAFNIUM SILICATES; HIGH PERFORMANCE APPLICATIONS; HIGH-K MATERIALS; LOW-POWER DEVICES; PRECURSOR SOLUTIONS; SILICON PRECURSORS;

ZIRCONIUM COMPOUNDS;

EID: 79952639887     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3481604     Document Type: Conference Paper

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