Interfacial dead-layer effects in hf-silicate films with Pt or RuO 2 gates

ACS Applied Materials and Interfaces

Volumn 5, Issue 14, 2013, Pages 6769-6772

  Kim, Hyo Kyeom ^a   Yu, Il Hyuk ^b   Lee, Jae Ho ^b   Hwang, Cheol Seong ^a,b  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

dielectric constant; Hf silicate; interfacial dead layer; Pt and RuO 2 gate

Indexed keywords

DIELECTRIC CONSTANTS (K); DIELECTRIC PERFORMANCE; GATE METALS; HF SILICATE; HF-SILICATE FILMS; HIGH-K GATE DIELECTRICS; INTERFACIAL DEAD-LAYER; MINIMUM THICKNESS;

HAFNIUM; HAFNIUM OXIDES; PERMITTIVITY; PLATINUM; RUTHENIUM ALLOYS; SILICON;

INTERFACES (MATERIALS);

EID: 84880807758     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am401842h     Document Type: Article

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