2007 IEEE device research conference: Tour de force multigate and nanowire metal oxide semiconductor field-effect transistors and their application

ACS Nano

Volumn 1, Issue 1, 2007, Pages 6-9

  Zhang, Pengpeng ^a   Mayer, Theresa S ^b   Jackson, Thomas N ^b  

^a Departments of Chemical Engineering   (United States)

^b The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS PROCESSS; CMOS TECHNOLOGY; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; ELECTRONIC CHIPS; FINFETS; GATE-ALL-AROUND; LABEL FREE; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOLECULAR DIAGNOSTICS; SI NANOWIRE; TOPDOWN;

BIOSENSORS; CMOS INTEGRATED CIRCUITS; METALLIC COMPOUNDS; MOS DEVICES; NANOWIRES; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

METAL; NANOWIRE; OXIDE;

CHEMISTRY; CONFERENCE PAPER; GENETIC PROCEDURES; HEALTH CARE ORGANIZATION; SEMICONDUCTOR;

BIOSENSING TECHNIQUES; METALS; NANOWIRES; OXIDES; SEMICONDUCTORS; SOCIETIES, SCIENTIFIC; TRANSISTORS;

EID: 63449086454     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn7001344     Document Type: Article

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