Growth characteristics and film properties of cerium dioxide prepared by plasma-enhanced atomic layer deposition

Journal of the Electrochemical Society

Volumn 158, Issue 8, 2011, Pages

  Kim, Woo Hee ^a,b   Kim, Min Kyu ^a   Maeng, W J ^c   Gatineau, Julien ^d   Pallem, Venkat ^d   Dussarrat, Christian ^d   Noori, Atif ^e   Thompson, David ^e   Chu, Schubert ^e   Kim, Hyungjun ^a  

^a Yonsei University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d AIR LIQUIDE   (France)

^e APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM DIOXIDES; CUBIC PHASIS; CYCLOPENTADIENYLS; EFFECTIVE OXIDE CHARGE; ELECTRICAL PROPERTY; FILM PROPERTIES; GROWTH CHARACTERISTIC; GROWTH CYCLE; HIGH-K MATERIALS; INTERFACE STATE DENSITY; LINEAR GROWTH; MICROELECTRONIC INDUSTRY; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POLYCRYSTALLINE; SELF-SATURATION; SI SUBSTRATES;

ATOMIC LAYER DEPOSITION; DEPOSITION; ELECTRIC PROPERTIES; FILM GROWTH; MICROELECTRONICS; PLASMA DEPOSITION; THERMAL EVAPORATION;

CERIUM;

EID: 80051711561     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3594766     Document Type: Article

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