High performance metal gate cmosfets with aggressively scaled Hf-based high-k

ECS Transactions

Volumn 1, Issue 5, 2006, Pages 609-623

  Song, S C ^a   Zhang, Z ^b   Bae, S H ^a   Kirsch, P ^c   Majhi, P ^d   Choi, R ^a   Lee, B H ^c  

^a SEMATECH   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c IBM   (United States)

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIELECTRIC MATERIALS; DIFFUSION; ETCHING; HAFNIUM COMPOUNDS; PERMITTIVITY; TITANIUM NITRIDE;

METAL FOOT; METAL GATE THICKNESS; POLY GATE;

MOSFET DEVICES;

EID: 33845241461     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2209308     Document Type: Conference Paper

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