SCOPUS 정보 검색 플랫폼

Volumn 2, Issue 12, 2014, Pages 2123-2136

Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures

(4) Ozgit Akgun, Cagla a Goldenberg, Eda a Okyay, Ali Kemal a Biyikli, Necmi a

a BILKENT UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRIC SPECTRA; LOW IMPURITY CONCENTRATIONS; POLYCRYSTALLINE THIN FILM; SECONDARY ION MASS SPECTROSCOPY; SELF-LIMITING GROWTHS; SPECTRAL TRANSMISSION; VISIBLE TRANSPARENCIES; WURTZITE CRYSTAL STRUCTURE;

ALUMINUM; CATHODES; CRYSTALLINE MATERIALS; DEPOSITION; GALLIUM ALLOYS; GALLIUM NITRIDE; IMPURITIES; LIGHT ABSORPTION; PHOTOELECTRONS; PLASMAS; PULSED LASER DEPOSITION; REFRACTIVE INDEX; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

ATOMIC LAYER DEPOSITION;

EID: 84896854658 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c3tc32418d Document Type: Article

Times cited : (148)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.