SCOPUS 정보 검색 플랫폼

Volumn 613, Issue , 2014, Pages 395-400

Electrical characterization of Ni/n-ZnO/p-Si/Al heterostructure fabricated by pulsed laser deposition technique

a NATIONAL INSTITUTE OF TECHNOLOGY (India)

Author keywords

Barrier height; Current voltage characteristics; Ideality factor; Ni n ZnO p Si Al heterojunction; Pulsed laser deposition

Indexed keywords

ACTIVATION ENERGY; HETEROJUNCTIONS; PULSED LASER DEPOSITION; SEMICONDUCTOR DIODES; SILICON; THERMIONIC EMISSION; X RAY DIFFRACTION; ZINC OXIDE;

BARRIER HEIGHTS; CAPACITANCE VOLTAGE CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; IDEALITY FACTORS; PULSED-LASER DEPOSITION TECHNIQUE; SCHOTTKY BARRIER HEIGHTS; WIDE TEMPERATURE RANGES; X-RAY DIFFRACTION STUDIES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84903844131 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2014.06.042 Document Type: Article

Times cited : (21)

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