SCOPUS 정보 검색 플랫폼

Volumn 584, Issue , 2014, Pages 611-616

Fabrication of nanowires of Al-doped ZnO using nanoparticle assisted pulsed laser deposition (NAPLD) for device applications

(5) Thanka Rajan, S a Subramanian, B a Nanda Kumar, A K a Jayachandran, M a Ramachandra Rao, M S b

a CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE (India)

b INDIAN INSTITUTE OF TECHNOLOGY MADRAS (India)

Author keywords

Al doped ZnO; Nanowires; NAPLD; Thin films

Indexed keywords

AL-DOPED ZNO; DIFFUSE REFLECTANCE SPECTROSCOPY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; HEXAGONAL WURTZITE STRUCTURE; LASER RAMAN SPECTROSCOPY; NANOPARTICLE-ASSISTED PULSED-LASER DEPOSITIONS; NAPLD; PREFERRED ORIENTATIONS;

ALUMINUM; ASPECT RATIO; ATOMIC FORCE MICROSCOPY; FIELD EMISSION MICROSCOPES; NANOPARTICLES; NANOWIRES; PHOTOLUMINESCENCE SPECTROSCOPY; PULSED LASER DEPOSITION; SAPPHIRE; SURFACE ROUGHNESS; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY DIFFRACTION; ZINC SULFIDE;

ZINC OXIDE;

EID: 84885343638 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2013.09.046 Document Type: Article

Times cited : (28)

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