Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes

Journal of Alloys and Compounds

Volumn 590, Issue , 2014, Pages 157-161

  Taşçioǧlu, Ilke ^a   Farooq, W A ^b   Turan, Raşit ^c   Altindal, Şemsettin ^d   Yakuphanoglu, Fahrettin ^a  

^a FIRAT UNIVERSITY   (Turkey)

^b KING SAUD UNIVERSITY   (Saudi Arabia)

^c MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^d GAZI UNIVERSITY   (Turkey)

Author keywords

Density of interface traps; Frequency and voltage dependent; Series and shunt resistances; Undoped and Mn doped ZnO p Si diodes

Indexed keywords

CHARGE TRANSPORT MECHANISMS; FREQUENCY AND VOLTAGE DEPENDENT; INTERFACE TRAP DENSITY; INTERFACE TRAPS; MN-DOPED ZNO; SERIES AND SHUNT RESISTANCES; SERIES RESISTANCES; SOL-GEL SPIN COATING METHOD;

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; MANGANESE; SEMICONDUCTOR DOPING; SILICON; SOL-GELS;

DIODES;

EID: 84891809471     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.12.043     Document Type: Article

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