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Volumn 104, Issue , 2013, Pages 95-99

Electrical characterization of Cr Schottky contacts on undoped and Ni-doped p-ZnO films grown by pulsed laser deposition on Si (1 0 0) substrates

(6) Stamataki, M a Tsamakis, D a Xanthakis, J P a Ali, H A b Esmaili Sardari, S b Iliadis, A A b

a NATIONAL TECHNICAL UNIVERSITY OF ATHENS (Greece)

b UNIVERSITY OF MARYLAND (United States)

Author keywords

AFM; Electrical measurements; Pulsed laser deposition (PLD); Schottky; ZnO

Indexed keywords

AFM; BARRIER HEIGHTS; CONSTANT TEMPERATURE; CONTACT MODE ATOMIC FORCE MICROSCOPY; ELECTRICAL CHARACTERIZATION; ELECTRICAL MEASUREMENT; HALL COEFFICIENT MEASUREMENTS; IDEALITY FACTORS; NI-DOPED; OXYGEN PARTIAL PRESSURE; P TYPE ZNO THIN FILM; P-TYPE CONDUCTIVITY; P-TYPE ZNO FILM; RECTIFYING PROPERTIES; ROOM TEMPERATURE; SCHOTTKY; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SEMICONDUCTING LAYER; SERIES RESISTANCES; SI(1 0 0); SILICON SUBSTRATES; WIDE BAND GAP; ZNO; ZNO FILMS;

ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); ELECTRIC RESISTANCE; LASERS; METALLIC FILMS; PULSED LASER DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84872413367 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2012.11.021 Document Type: Article

Times cited : (8)

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