Characterization of ZnO and ZnO:Al thin films deposited by the sol-gel dip-coating technique

Thin Solid Films

Volumn 517, Issue 3, 2008, Pages 1077-1080

  Marotti, R E ^a   Bojorge, C D ^b   Broitman, E ^c   Canepa H R ^d   Badan J A ^a   Dalchiele, E A ^a   Gellman, A J ^c  

^a INSTITUTO DE FÍSICA   (Uruguay)

^b Centro de Investigaciones en Solidos Buenos Aires   (Argentina)

^c CARNEGIE MELLON UNIVERSITY   (United States)

^d Instituto de Investigaciones Cientificas y Tecnicas de Las Fuerzas Armadas   (Argentina)

Author keywords

Doping; Optical properties; Sol gel; Temperature programmed desorption; Thin films; Zinc oxide

Indexed keywords

ABSORPTION; ADSORPTION; ALUMINUM; COLLOIDS; DESORPTION; DEWATERING; ENERGY GAP; GELATION; GELS; HEAT TREATMENT; KETONES; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; OPTICAL MATERIALS; OPTICAL PROPERTIES; OXIDE MINERALS; OXIDES; PHOTOELECTRON SPECTROSCOPY; QUARTZ; SEMICONDUCTING ZINC COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; TEMPERATURE PROGRAMMED DESORPTION; THICK FILMS; THIN FILMS; X RAY ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC ALLOYS; ZINC OXIDE;

AB SORPTION COEFFICIENTS; BAND EDGES; BANDGAP ENERGIES; DIP COATINGS; DOPED SAMPLES; DOPING; EXCITONIC ABSORPTIONS; FILM MICROSTRUCTURES; MONOTONICALLY; NANOCRYSTALLINE; OPTICAL TRANSMITTANCES; PRECURSOR SOLUTIONS; QUARTZ SUBSTRATES; SOL-GEL; THERMAL TREATMENTS; UV REGIONS; WATER ADSORPTIONS; X-RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES; ZINC OXIDE FILMS; ZNO FILMS; ZNO:AL THIN FILMS;

OXIDE FILMS;

EID: 56949089567     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.06.028     Document Type: Article

References (19)

1. Chen Y.F., Ko H.J., Hong S.K., Sekiuchi T., Yao T., and Segawa Y. J. Vac. Sci. Technol., B 18 (2000) 1514
2. Özgür Ü., Alivov Y.I., Liu C., Teke A., Reshchikov M.A., Doǧan S., Avrutin V., Cho S.J., and Morkoç H. J. Appl. Phys. 98 (2003) 041301
3. Wong E.M., and Searson P.C. Appl. Phys. Lett. 74 (1999) 2939
4. Zwicker G., Jacobi K., and Cunningham J. Int. J. Mass Spectrom. Ion Process. 60 (1984) 213
5. Li Z.W., and Gao W. Thin Solid Films 515 (2007) 3323
6. Fu Z., Wang Z., Yang B., Yang Y., Yan H., and Xia L. Mater. Lett. 61 (2007) 4832
7. Yun Y., Broitman E., and Gellman A.J. Langmuir 23 (2007) 1953
8. Redhead P.A. Vacuum 12 (1962) 203
9. Bojorge C.D., Cánepa H.R., Gilabert U.E., Silva D., Dalchiele E.A., and Marotti R.E. J. Mater. Sci., Mater. Electron. 18 (2007) 1119
10. JCPDS, 5-0664, ZnO, 1992.
11. Coppa B.J., Davis R.F., and Nemanich R.J. Appl. Phys. Lett. 82 3 (2003) 400
12. Chen M., Wang X., Yu Y.H., Pei Z.L., Bei X.D., Sun C., Huang R.F., and Wen L.S. Appl. Surf. Sci. 158 (2000) 134
13. Bao D., Gu H., and Kuang A. Thin Solid Films 312 (1998) 37
14. Dalchiele E.A., Giorgi P., Marotti R.E., Martín F., Ramos-Barrado J.R., Ayouci R., and Leinen D. Sol. Energy Mater. Sol. Cells 70 (2001) 245
15. Keis K., and Roos A. Opt. Mater. 20 (2002) 35
16. Znaidi L., Soler Illia G.J.A.A., Benyahia S., Sanchez C., and Kanaev A.V. Thin Solid Films 428 (2003) 257
17. Valle G.G., Hammer P., Pulcinelli S.H., and Santilli C.V. J. Eur. Ceram. Soc. 24 (2004) 1009
18. R. Bhargava, Wide bandgap II-VI semiconductors, EMIS Datareviews Series No 17 (INSPEC, London, 1997), p. 27 and p. 179.
19. Sernelius B.E., Berggren K.F., Jin Z.C., Hamberg I., and Granqvist C.G. Phys. Rev. B 37 (1988) 10244