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Volumn 14, Issue 1, 2012, Pages 121-126
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Electrical-optical properties of nanofiber ZnO film grown by sol gel method and fabrication of ZnO/p-Si heterojunction
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Author keywords
Nanofiber ZnO; Schottky diode; Semiconductor
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Indexed keywords
ATOMIC FORCE;
BARRIER HEIGHTS;
CAPACITANCE VOLTAGE;
CURRENT VOLTAGE;
ELECTRICAL AND OPTICAL PROPERTIES;
ELECTRICAL CONDUCTIVITY;
GRAIN SIZE;
HETEROJUNCTION DIODES;
IDEALITY FACTORS;
INTRINSIC CONDUCTIVITY;
NONLINEAR BEHAVIOR;
P-TYPE SILICON;
SCHOTTKY DIODES;
SEMICONDUCTOR;
SOL GEL DIP COATING;
SOL-GEL METHODS;
ZNO;
ZNO FILMS;
ZNO/P-SI;
ATOMIC FORCE MICROSCOPY;
DIODES;
ELECTRIC CONDUCTIVITY;
GELS;
HETEROJUNCTIONS;
METALLIC FILMS;
NANOFIBERS;
OPTICAL PROPERTIES;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTOR DIODES;
SILICON;
SOLS;
ZINC OXIDE;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 83555172477
PISSN: 12932558
EISSN: None
Source Type: Journal
DOI: 10.1016/j.solidstatesciences.2011.11.007 Document Type: Article |
Times cited : (56)
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References (36)
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