Electro-optical characterization of ZnO/ZnMgO structure grown on p-type Si (1 1 1) by PA-MBE method

Journal of Alloys and Compounds

Volumn 587, Issue , 2014, Pages 724-728

  Pietrzyk, M A ^a   Zielony, E ^b   Stachowicz, M ^a   Reszka, A ^a   Placzek Popko E ^b   Wierzbicka, A ^a   Przezdziecka, E ^a   Droba, A ^a   Kozanecki, A ^a  

^a INSTITUTE OF PHYSICS   (Poland)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Electrical properties; Photoluminescence; Zinc oxide

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; ELECTRICAL MEASUREMENT; ELECTRO-OPTICAL CHARACTERIZATIONS; ELECTROOPTICAL PROPERTIES; PHOTOLUMINESCENCE SPECTRUM; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RADIATIVE RECOMBINATION; RADIATIVE RECOMBINATION PROCESS;

CATHODOLUMINESCENCE; DEFECTS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SILICON; X RAY DIFFRACTION; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84888219696     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.10.256     Document Type: Article

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