Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency

Vacuum

Volumn 57, Issue 2, 2000, Pages 219-228

  Akkal, B ^a   Benamara, Z ^a   Gruzza, B ^b   Bideux, L ^b  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; GOLD; HEATING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE;

ENERGY DENSITY DISTRIBUTION; INDIUM ANTIMONIDE; RELAXATION TIME;

INTERFACES (MATERIALS);

EID: 0034187997     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00131-7     Document Type: Article

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