UV-visible detector and LED based n-ZnO/p-Si heterojunction formed by electrodeposition

AIP Advances

Volumn 3, Issue 3, 2013, Pages

  Baltakesmez, A ^a   Tekmen, S ^a   Ko̧ P ^a   Tuzemen S ^a   Meral, K ^a   Onganer, Y ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL DEPOSITION; ELECTROCHEMICAL SENSORS; ELECTROLUMINESCENCE; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; LIGHT; LIGHT EMITTING DIODES; LUMINESCENCE; METALLIC FILMS; OPTICAL FILMS; OXIDE MINERALS; REDUCTION; ZINC OXIDE;

BAND-EDGE PHOTOLUMINESCENCE; GROWTH CONDITIONS; IDEALITY FACTORS; MULTIPLE SCATTERING EFFECT; PREFERRED ORIENTATIONS; RECTIFYING BEHAVIORS; TURN-ON VOLTAGES; ZNO/P-SI HETEROJUNCTIONS;

THIN FILMS;

EID: 84875868119     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4795737     Document Type: Article

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