Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide

International Journal of Photoenergy

Volumn 2014, Issue , 2014, Pages

  Ge, Jia ^a,b   Tang, Muzhi ^a   Wong, Johnson ^a   Zhang, Zhenhao ^c   Dippell, Torsten ^c   Doerr, Manfred ^c   Hohn, Oliver ^c   Huber, Marco ^c   Wohlfart, Peter ^c   Aberle, Armin G ^a   Mueller, Thomas ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c Singulus Technologies   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CARBON DIOXIDE; HETEROJUNCTIONS; HYDROGEN; HYDROGENATION; INDUCTIVELY COUPLED PLASMA; OPEN CIRCUIT VOLTAGE; OPTICAL PROPERTIES; PASSIVATION; SILICON COMPOUNDS; SILICON SOLAR CELLS; SILICON WAFERS;

HIGH QUALITY; HYDROGEN CONTENTS; INDUCTIVELY-COUPLED PLASMA; OXYGEN INCORPORATION; PASSIVATION FILM; PROCESS TEMPERATURE; SILICON SUBOXIDES; SILICON SURFACES; SILICON WAFER SOLAR CELLS; SURFACE PASSIVATION;

AMORPHOUS SILICON;

EID: 84903625177     PISSN: 1110662X     EISSN: 1687529X     Source Type: Journal    
DOI: 10.1155/2014/752967     Document Type: Article

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