Hydrogenated amorphous silicon film as intrinsic passivation layer deposited at various temperatures using RF remote-PECVD technique

Current Applied Physics

Volumn 10, Issue 2 SUPPL., 2010, Pages

  Jeon, Minsung ^a   Yoshiba, Shuhei ^a   Kamisako, Koichi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Amorphous silicon film; Heterojunction solar cell; Passivation layer; Remote PECVD

Indexed keywords

A-SI:H; AMORPHOUS SILICON FILM; ANNEALING TREATMENTS; BULK PASSIVATION; DEPOSITION CONDITIONS; DEPOSITION TEMPERATURES; HETEROJUNCTION SOLAR CELLS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); HYDROGENATED AMORPHOUS SILICON FILMS; PASSIVATION LAYER; REMOTE-PECVD; THERMAL ANNEALING TREATMENT; VARIOUS SUBSTRATES;

AMORPHOUS FILMS; CARRIER LIFETIME; CHEMICAL VAPOR DEPOSITION; DEPOSITION; HETEROJUNCTIONS; HYDROGENATION; METALLIC FILMS; PASSIVATION; PLASMA DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SOLAR CELLS;

AMORPHOUS SILICON;

EID: 77949570777     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.11.059     Document Type: Article

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