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Volumn 107, Issue 1, 2010, Pages

Crystalline silicon surface passivation by high-frequency plasma-enhanced chemical-vapor-deposited nanocomposite silicon suboxides for solar cell applications

(3) Mueller, Thomas a Schwertheim, Stefan a Fahrner, Wolfgang R a

a UNIVERSITY OF HAGEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BENEFICIAL EFFECTS; CRYSTALLINE SILICON SURFACES; DEFECT REDUCTION; EFFECTIVE LIFETIME; FLOAT ZONES; HIGH FREQUENCY HF; HIGH QUALITY; INJECTION LEVELS; LOW TEMPERATURE ANNEALING; LOW TEMPERATURES; OXYGEN CONTENT; P-TYPE; P-TYPE SILICON; POST ANNEALING; RAMAN SPECTRA; SI-O-SI BOND; SILICON SUBOXIDES; SILICON-BASED; SOLAR-CELL APPLICATIONS; SOURCE GAS; SURFACE PASSIVATION; THERMAL-ANNEALING;

AMORPHOUS SILICON; CARBON DIOXIDE; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DEFECTS; NANOCOMPOSITES; OXYGEN; PASSIVATION; PLASMA DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SILICON OXIDES; SOLAR CELLS;

SILICON WAFERS;

EID: 75649096731 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3264626 Document Type: Article

Times cited : (52)

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