Hydrogen plasma treatments for passivation of amorphous-crystalline silicon-heterojunctions on surfaces promoting epitaxy

Applied Physics Letters

Volumn 102, Issue 12, 2013, Pages

  Mews, Mathias ^a   Schulze, Tim F ^b   Mingirulli, Nicola ^a   Korte, Lars ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP WIDENING; BAND-OFFSET ENGINEERING; HETERO INTERFACES; HYDROGEN DENSITIES; HYDROGEN PLASMA TREATMENTS; LOW TEMPERATURES; MINORITY CARRIER LIFETIMES; POST-DEPOSITION;

ATOMS; DEPOSITION; ENERGY GAP; EPITAXIAL GROWTH; HETEROJUNCTIONS; PASSIVATION; PLASMA APPLICATIONS;

SILICON;

EID: 84875955891     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4798292     Document Type: Article

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