Extremely low surface recombination velocities on low-resistivity n-type and p-type crystalline silicon using dynamically deposited remote plasma silicon nitride films

Progress in Photovoltaics: Research and Applications

Volumn 22, Issue 6, 2014, Pages 641-647

  Duttagupta, Shubham ^a   Lin, Fen ^a   Wilson, Marshall ^b   Boreland, Matthew B ^a   Hoex, Bram ^a   Aberle, Armin G ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Semilab SDI LLC   (United States)

Author keywords

fixed charge density; industrial firing stable; industrial inline PECVD reactor; interface defect density; silicon nitride; surface passivation; surface recombination velocity

Indexed keywords

INDUSTRY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; SILICON WAFERS;

FIXED CHARGE DENSITY; INDUSTRIAL FIRING STABLE; INDUSTRIAL INLINE PECVD REACTOR; INTERFACE DEFECTS; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

INTERFACES (MATERIALS);

EID: 84901196950     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2320     Document Type: Article

References (38)

1. Aberle AG,. Surface passivation of crystalline silicon solar cells: a review. Progress in Photovoltaics 2000; 8: 473-487.
2. Nagel H, Aberle AG, Hezel R,. Optimised antireflection coatings for planar silicon solar cells using remote PECVD silicon nitride and porous silicon dioxide. Progress in Photovoltaics 1999; 7: 245-260.
3. Cuevas A, Kerr MJ, Schmidt J,. Passivation of crystalline silicon using silicon nitride. Proceedings of 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 2003; 913-918.
4. Duerinckx F, Szlufcik J,. Defect passivation of industrial multicrystalline solar cells based on PECVD silicon nitride. Solar Energy Materials and Solar Cells 2002; 72: 231-246.
5. Kerr MJ, Cuevas A,. Recombination at the interface between silicon and stoichiometric plasma silicon nitride. Semiconductor Science and Technology 2002; 17: 166-172.
6. Lauinger T, Moschner J, Aberle AG, Hezel R,. Optimization and characterization of remote plasma-enhanced chemical vapor deposition silicon nitride for the passivation of p-type crystalline silicon surfaces. Journal of Vacuum Science & Technology A-Vacuum Surfaces and Films 1998; 16: 530-543.
7. Lauinger T, Schmidt J, Aberle AG, Hezel R,. Record low surface recombination velocities on 1 ohm cm p-silicon using remote plasma silicon nitride passivation. Applied Physics Letters 1996; 68: 1232-1234.
8. Hameiri Z, Mai L, Borojevic N, Javid S, Tjahjono B, Wang S, Sproul A, Wenham S,. The influence of silicon nitride layer parameters on the implied V(oc) of Cz Silicon wafers after annealing. 34th IEEE Photovoltaic Specialists Conference, IEEE, New York, 2009; 1430-1435.
9. Chen FW,. PECVD Silicon Nitride for n-type Silicon Solar Cells. University of New South Wales: Sydney, 2008.
10. Moschner JD, Henze J, Schmidt J, Hezel R,. High-quality surface passivation of silicon solar cells in an industrial-type inline plasma silicon nitride deposition system. Progress in Photovoltaics 2004; 12: 21-31.
11. Soppe W, Rieffe H, Weeber A,. Bulk and surface passivation of silicon solar cells accomplished by silicon nitride deposited on industrial scale by microwave PECVD. Progress in Photovoltaics 2005; 13: 551-569.
12. Winderbaum S, Cuevas A, Chen FW, Tan J, Hanton K, Macdonald D, Roth K,. Industrial PECVD Silicon Nitride: Surface and Bulk Passivation of Silicon Wafers. 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, France 2004; 576-579.
13. Kern W,. The evolution of silicon wafer cleaning technology. Journal of the Electrochemical Society 1990; 137: 1887-1892.
14. Duttagupta S, Ma F, Hoex B, Mueller T, Aberle AG,. Optimised antireflection coatings using silicon nitride on textured silicon surfaces based on measurements and multidimensional modelling. Energy Procedia 2012; 15: 78-83.
15. Sinton RA, Cuevas A,. Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data. Applied Physics Letters 1996; 69: 2510-2512.
16. Shockley W, Read WT,. Statictics of the recombinations of holes and electrons. Physical Review 1952; 87: 835-842.
17. Hall RN,. Electron-hole recombination in Germanium. Physical Review 1952; 87: 387.
18. Grove AS, Fitzgerald DJ,. Surface effects on p-n junctions- characteristics of surface space-charge regions under non-equilibrium conditions. Solid State Electronics 1966; 9: 783-806.
19. Aberle AG,. Crystalline silicon solar cells: advanced surface passivation and analysis, Sydney, 1999.
20. Steingrube S, Altermatt PP, Steingrube DS, Schmidt J, Brendel R,. Interpretation of recombination at c-Si/SiNx interfaces by surface damage. Journal of Applied Physics 2010; 108.
21. Ma F-J, Samudra GG, Peters M, Aberle AG, Werner F, Schmidt J, Hoex B,. Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers. Journal of Applied Physics 2012; 112.
22. Wilson M, D'Amico J, Savtchouk A, Edelman P, Findlay A, Jastrzebski L, Lagowski J, Kis-Szabo K, Korsos F, Toth A, Pap A, Kopecek R, Peter K,. Multifunction metrology platform for photovoltaics. Procedings of 37th IEEE Photovoltaic Specialist Conference, Seattle, USA, 2011.
23. Wilson M, Marinskiy D, Byelyayev A, D'Amico J, Findlay A, Jastrzebski L, Lagowski J,. The present status and recent advancements in corona-Kelvin non-contact electrical metrology of dielectrics for IC-manufacturing. ECS Transactions 2006; 3: 3-24.
24. Wilson M, Lagowski J, Jastrzebski L, Savtchouk A, Faifer V,. COCOS (Corona oxide characterization of semiconductor) non-contact metrology for gate dielectrics. In Characterization and Metrology for Ulsi Technology 2000, International Conference, Seller DG, Diebold AC, Shaffner TJ, McDonald R, Bullis WM, Smith PJ, et al. (eds). Amer Inst Physics: Melville, 2001; 220-225.
25. Weeber AW, Rieffe HC, Sinke WC, Soppe WJ,. Structural and passivating properties of SiNx:H deposited under different precursor gases. 19th European Photovoltaic Solar Energy Conference, Paris, 2004; 1005-1008.
26. Weeber AW, Rieffe HC, Romijn IG, Sinke WC, Soppe WJ,. The fundamental properties of SiNx:H that determine its passivating qualities. 21st IEEE Photovoltaic Specialists Conference, Orlando, 2005; 1043-1046.
27. Dauwe S, Schmidt J, Metz A, Hezel R,. Fixed charge density in silicon nitride films on crystalline silicon surfaces under illumination. Proceedings of the 29th IEEE Photovoltaic Specialists Conference, New Orleans, USA, 2002; 162-165.
28. Nursam NM, Ren Y, Weber KJ,. PECVD silicon nitride passivation on boron emitter: the analysis of electrostatic charge on the interface properties. Advances in OptoElectronics 2010; 2010.
29. Kuhlmann B, Aberle AG, Hezel R,. Two-dimentional numerical optimisation study of inversion layer emitters of silicon solar cells. Proceedings of the 13th EU PVSEC, Nice, France, 1995; 1209.
30. Glunz SW, Biro D, Rein S, Warta W,. Field-effect passivation of the SiO2-Si interface. Journal of Applied Physics 1999; 86: 683-691.
31. Yablonovitch E, Swanson RM, Eades WD, Weinberger BR,. Electronhole recombination at the Si-SiO2 interface. Applied Physics Letters 1986; 48: 245-247.
32. De Wolf S, Agostinelli G, Beaucarne G, Vitanov P,. Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation. Journal of Applied Physics 2005; 97.
33. Warren WL, Kanicki J, Robertson J, Poindexter EH, McWhorter PJ,. Electron-paramagnetic-resonance investigation of charge trapping centers in amorphous-silicon nitride films. Journal of Applied Physics 1993; 74: 4034-4046.
34. Krick DT, Lenahan PM, Kanicki J,. Nature of the dominant deep trap in amorphous-silicon nitride. Physical Review B 1988; 38: 8226-8229.
35. Lenahan PM, Krick DT, Kanicki J,. The nature of the dominant deep trap in amorphous-silicon nitride films: evidence for a negative correlation energy. Applied Surface Science 1989; 39: 392-405.
36. Mackel H, Ludemann R,. Detailed study of the composition of hydrogenated SiN(x) layers for high-quality silicon surface passivation. Journal of Applied Physics 2002; 92: 2602-2609.
37. Weber KJ, Jin H,. Improved silicon surface passivation achieved by negatively charged silicon nitride films. Applied Physics Letters 2009; 94.
38. Chen FW, Li TTA, Cotter JE,. Passivation of boron emitters on n-type silicon by plasma-enhanced chemical vapor deposited silicon nitride. Applied Physics Letters 2006; 88.