Study on electrical transport properties of strained Si nanowires by in situ transmission electron microscope

Wuli Xuebao/Acta Physica Sinica

Volumn 63, Issue 11, 2014, Pages

  Wang, Jiang Jing ^a   Shao, Rui Wen ^a   Deng, Qing Song ^a   Zheng, Kun ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Electrical transport properties; Plastic deformation; Si nanowires; Strain

Indexed keywords

IN SITU PROCESSING; NANOWIRES; PLASTIC DEFORMATION; SILICON; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

BENDING STRAIN; ELECTRICAL TRANSPORT PROPERTIES; ION BEAM TECHNIQUE; SEMICONDUCTOR NANOSTRUCTURES; SI NANOWIRE; SILICON-ON-INSULATOR MATERIALS; STRAIN APPROACHES; STRAIN ENGINEERING;

ELECTRIC PROPERTIES;

EID: 84902387936     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: 10.7498/aps.63.117303     Document Type: Article

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