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Nanoscale

Volumn 6, Issue 9, 2014, Pages 4936-4941

Bandgap engineering and manipulating electronic and optical properties of ZnO nanowires by uniaxial strain

(8) Shao, Rui Wen a Zheng, Kun a Wei, Bin a Zhang, Yue Fei a Li, Yu Jie a Han, Xiao Dong a Zhang, Ze b Zou, Jin c

a BEIJING UNIVERSITY OF TECHNOLOGY (China)

b ZHEJIANG UNIVERSITY (China)

c UNIVERSITY OF QUEENSLAND (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; NANOWIRES; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES; ZINC OXIDE;

BAND GAP ENGINEERING; CATHODOLUMINESCENCE SPECTROSCOPY; COMPRESSIVE STRAIN; ELECTRONIC AND OPTICAL PROPERTIES; ENERGY BANDGAPS; NEAR BAND EDGE EMISSIONS; ROOM TEMPERATURE; UNI-AXIAL STRAINS;

TENSILE STRAIN;

EID: 84898670991 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr00059e Document Type: Article

Times cited : (56)

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