Unusual catalyst-free epitaxial growth of silicon nanowires by thermal evaporation

Applied Physics Letters

Volumn 93, Issue 6, 2008, Pages

  Qin, Y ^a   Zhang, X N ^a   Zheng, K ^a   Li, H ^a   Han, X D ^a   Zhang, Z ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSIS; ECOLOGY; ELECTRIC WIRE; EVAPORATION; MOISTURE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACE CHEMISTRY; SURFACE TENSION; THERMAL EVAPORATION; VAPORS;

CATALYST-FREE; EPITAXIAL-GROWTH MODEL; EVAPORATION PROCESS; FIRST-PRINCIPLE CALCULATIONS; GROWTH DIRECTIONS; GROWTH MODELING; SI NANO-PARTICLES; SILICON NANOWIRES; SUBSTRATE ORIENTATIONS; SURFACE ENERGIES; TEMPERATURE-DEPENDENT;

EPITAXIAL GROWTH;

EID: 49749146011     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2967875     Document Type: Article

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