Model of electronical conductivity effective mass of strained Si

Wuli Xuebao/Acta Physica Sinica

Volumn 59, Issue 9, 2010, Pages 6545-6548

  Zhao, Li Xia ^a   Zhang, He Ming ^a   Hu, Hui Yong ^a   Dai, Xian Ying ^a   Xuan, Rong Xi ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

Conductivity effective mass; K P method; Strained Si

Indexed keywords

EID: 77957606207     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Lin J Y, Tang Y H, Tsai M H, 2009 Computer Physics Communication 180 659.
2. Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 7228 (in Chinese).
3. Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese).
4. Courtesy J R, 2005 IEEE Circuits and Magazine 9 18.
5. Song J J, Zhang H M, Hu H Y, Dian X Y, Xuan R X 2007 Chin. Phys. 16 3827.
6. Xie X D, Lu D. 1998 Energy band theory of solids (Shanghai: Fudan University Press) (in Chinese) p58.
7. Smirnov S, Kosina H 2004 Solid-State Electronics 48 1325.
8. Shi M, Wu G J 2008 Physics of Semiconductor Devices (Xi'an: Xi'an Jiaotong University Press) (in Chinese) p389.
9. Liu E K, Zhu B Sh, Luo J Sh 1994 Semiconductor Physics (Beijing: Defense Industry Press) (in Chinese) p95.