Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations

Applied Physics Letters

Volumn 86, Issue 9, 2005, Pages 1-3

  Wang, Jing ^a   Rahman, Anisur ^a   Ghosh, Avik ^a   Klimeck, Gerhard ^a   Lundstrom, Mark ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; ELECTRON VELOCITY; QUANTUM CONFINEMENT (QC); SILICON NANOWIRE TRANSISTORS (SNWT);

BALLISTICS; BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTROMAGNETIC DISPERSION; FERMI LEVEL; MATHEMATICAL MODELS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SEMICONDUCTING SILICON; WIRE;

TRANSISTORS;

EID: 21044455361     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1873055     Document Type: Article

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