Giant piezoresistance of p-type nano-thick silicon induced by interface electron trapping instead of 2D quantum confinement

Nanotechnology

Volumn 22, Issue 1, 2011, Pages

  Yang, Yongliang ^a   Li, Xinxin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

2D-QUANTUM CONFINEMENT EFFECTS; BULK SILICON; CANTILEVER BENDING; CONCENTRATION CHANGE; ELECTRON TRAPPING; INTERFACE STATE; MOBILITY CHANGES; ORDER OF MAGNITUDE; P-TYPE; P-TYPE SILICON; PIEZO-RESISTORS; PIEZORESISTANCE; PIEZORESISTIVE COEFFICIENTS; SILICON THICKNESS; SINGLE-CRYSTALLINE; TOPDOWN; TRAPPING EFFECTS; ULTRA-THIN;

CARRIER CONCENTRATION; QUANTUM CONFINEMENT;

CARRIER MOBILITY;

EID: 79251546083     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/1/015501     Document Type: Article

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