Green-light nanocolumn light emitting diodes with triangular-lattice uniform arrays of ingan-based nanocolumns

IEEE Journal of Quantum Electronics

Volumn 50, Issue 7, 2014, Pages 538-547

  Kishino, Katsumi ^a   Yamano, Koji ^a  

^a SOPHIA UNIVERSITY   (Japan)

Author keywords

Gallium nitride; indium gallium nitride; light emitting diodes; nanocrystals; nanowires; wide bad gap semicondcutors

Indexed keywords

GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NANOCRYSTALS; NANOWIRES; PASSIVATION; SEMICONDUCTOR QUANTUM WELLS;

CORE/SHELL STRUCTURE; EMISSION WAVELENGTH; EXTERNAL QUANTUM EFFICIENCY; INDIUM GALLIUM NITRIDE; LINEWIDTH NARROWING; NANOCOLUMN LIGHT EMITTING DIODES; SELECTIVE AREA GROWTH; WIDE BAD GAP SEMICONDCUTORS;

LIGHT EMITTING DIODES;

EID: 84902212206     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2014.2325013     Document Type: Article

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