Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

Nanotechnology

Volumn 22, Issue 7, 2011, Pages

  Tourbot, G ^a   Bougerol, C ^b   Grenier, A ^a   Den Hertog, M ^b   Sam Giao, D ^a   Cooper, D ^a   Gilet, P ^a   Gayral, B ^a   Daudin, B ^a  

^a CEA GRENOBLE   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTIC RELAXATION; ELECTRON TOMOGRAPHY; GA DIFFUSION; GAN SHELLS; INGAN/GAN; MEAN FREE PATH; MISFIT DISLOCATIONS; NANOWIRE HETEROSTRUCTURES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PLASTIC RELAXATION; STRUCTURAL AND OPTICAL PROPERTIES;

CRYSTALS; ELECTRIC IMPEDANCE TOMOGRAPHY; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; PHOTOLUMINESCENCE SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

OPTICAL PROPERTIES;

EID: 79251568009     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/7/075601     Document Type: Article

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