Fundamental aspects of HfO 2-based high-k metal gate stack reliability and implications on t inv-scaling

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Cartier, E ^a   Kerber, A ^a   Ando, T ^a   Frank, M M ^a   Choi, K ^a   Krishnan, S ^a   Linder, B ^a   Zhao, K ^a   Monsieur, F ^a   Stathis, J ^a   Narayanan, V ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE-LEAKAGE CURRENT; LAYER STRUCTURES; METAL GATE STACK; RELIABILITY MARGIN;

ELECTRON DEVICES; HAFNIUM OXIDES; MATERIALS PROPERTIES; RELIABILITY; SILICON COMPOUNDS;

INTEGRATED CIRCUITS;

EID: 84857007527     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131579     Document Type: Conference Paper

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