Effects of O3 and H2 O oxidants on C and N-related impurities in atomic-layer-deposited La2 O3 films observed by in situ x-ray photoelectron spectroscopy

Applied Physics Letters

Volumn 97, Issue 9, 2010, Pages

  Park, Tae Joo ^a   Sivasubramani, Prasanna ^a   Coss, Brian E ^a   Kim, Hyun Chul ^a   Lee, Bongki ^a   Wallace, Robert M ^a   Kim, Jiyoung ^a   Rousseau, Mike ^b   Liu, Xinye ^b   Li, Huazhi ^b   Lehn, Jean Sebastien ^b   Hong, Daewon ^b   Shenai, Deo ^b  

^a The University of Texas at Dallas   (United States)

^b DOW CHEMICAL COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; IMPURITIES IN; IN-SITU; INTERFACIAL LAYER; OUT-DIFFUSION; SILICATE FORMATION;

BINDING ENERGY; OXIDANTS; PHOTOELECTRICITY; PHOTONS; SILICATES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77956381226     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3481377     Document Type: Article

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