Defects at Ge/oxide and III-V/oxide interfaces

Microelectronic Engineering

Volumn 109, Issue , 2013, Pages 211-215

  Van De Walle, C G ^a   Choi, M ^a   Weber, J R ^a   Lyons, J L ^a   Janotti, A ^a  

^a University of California   (United States)

Author keywords

Carrier trap; Dangling bond; Defects; First principles calculations; Fixed charge; High k dielectrics

Indexed keywords

CARRIER TRAPS; DEFECT FORMATION ENERGIES; DEVICE PERFORMANCE; FIRST-PRINCIPLES CALCULATION; FIXED CHARGES; HIGH-K DIELECTRIC; SEMICONDUCTOR BAND GAP; SEMICONDUCTOR CHANNELS;

CALCULATIONS; DANGLING BONDS; DEFECTS; DENSITY FUNCTIONAL THEORY; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; GERMANIUM; HAFNIUM OXIDES; POINT DEFECTS;

INTERFACES (MATERIALS);

EID: 84876766177     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.03.151     Document Type: Article

References (48)

1. W. Kohn, and L.J. Sham Phys. Rev. 140 1965 A1133 A1138
2. J. Heyd, G.E. Scuseria, and M. Ernzerhof J. Chem. Phys. 118 2003 8207 8215
3. J. Perdew, K. Burke, and M. Ernzerhof Phys. Rev. Lett. 77 1996 3865 3868
4. J.R. Weber, A. Janotti, and C.G. Van de Walle Phys. Rev. B 87 2013 035203
5. M. Choi, A. Janotti, and C.G. Van de Walle J. Appl. Phys. 113 2013 044501
6. J.L. Lyons, A. Janotti, and C.G. Van de Walle Phys. Rev. B 80 2009 205113
7. J.L. Lyons, A. Janotti, and C.G. Van de Walle Microelec. Eng. 88 2011 1452 1456
8. P.E. Blöchl Phys. Rev. B 50 1994 17953 17979
9. G. Kresse, and J. Joubert Phys. Rev. B 59 1999 1758 1775
10. G. Kresse, and J. Furthmüller Phys. Rev. B. 54 1996 11169 11186
11. G. Kresse, and J. Furthmüller Comput. Mat. Sci. 6 1996 15 50
12. C. Freysoldt, J. Neugebauer, and C.G. Van de Walle Phys. Rev. Lett. 102 2009 016402
13. C. Freysoldt, J. Neugebauer, and C.G. Van de Walle Phys. Status Solidi B 248 2011 1067 1076
14. C.O. Chui, S. Ramanathan, B.B. Triplett, P. McIntyre, and K.C. Saraswat IEEE Electron Device Lett. 23 2002 473 475
15. A. Ritenour, A. Khakifirooz, D.A. Antoniadis, R.Z. Lei, W. Tsai, A. Dimoulas, G. Mavrou, and Y. Panayiotatos Appl. Phys. Lett. 88 2006 132107
16. D.P. Brunco, B. De Jaeger, G. Eneman, J. Mitard, G. Hellings, A. Satta, V. Terzieva, L. Souriau, F.E. Leys, G. Pourtois, M. Houssa, G. Winderickx, E. Vrancken, S. Sioncke, K. Opsomer, G. Nicholas, M. Caymax, A. Stesmans, J. Van Steenbergen, P.W. Mertens, M. Meuris, and M.M. Heyns J. Electrochem. Soc. 155 2008 H552 H561
17. S.J. Whang, S.J. Lee, F. Gao, N. Wu, C.X. Zhu, J.S. Pan, L.J. Tang, and D.L. Kwong Tech. Dig. Int. Electron Devices Meet. 2004 2004 307 310
18. H. Shang, K.L. Lee, P. Kozlowski, C. D'Emic, I. Babich, E. Sikorski, M.K. Ieong, H.H.P. Wong, K. Guarini, and N. Haensch IEEE Electron Device Lett. 25 2004 135 137
19. W.P. Bai, N. Lu, A. Ritenour, M.L. Lee, D.A. Antoniadis, and D.L. Kwong IEEE Electron Device Lett. 27 2006 175 178
20. P. Broqvist, A. Alkauskas, and A. Pasquarello Phys. Rev. B. 78 2008 075203
21. V.V. Afanas'ev, Y.G. Fedorenko, and A. Stesmans Appl. Phys. Lett. 87 2005 032107
22. J.R. Weber, A. Janotti, P. Rinke, and C.G. Van de Walle Appl. Phys. Lett. 91 2007 142101
23. A. Fazzio, A. Janotti, A.J.R. da Silva, and R. Mota Phys. Rev. B. 61 2000 R2401 R2404
24. P. Śpiewak, J. Vanhellemont, K. Sueoka, K.J. Kurzydlowski, and I. Romandic J. Appl. Phys. 103 2008 086103
25. H. Tahini, A. Chroneos, R.W. Grimes, U. Schwingenschlögl, and H. Bracht Appl. Phys. Lett. 99 2011 072112
26. H. Hässlein, R. Sielemann, and C. Zistl Phys. Rev. Lett. 80 1998 2626 2629
27. H. Hässlein, R. Sielemann, and C. Zistl Mater. Sci. Forum 59 1997 258 263
28. C. Zistl, R. Sielemann, H. Hässlein, S. Gall, D. Bräunig, and J. Bollmann Mater. Sci. Forum 53 1997 258 263
29. G.D. Wilk, R.M. Wallace, and J.M. Anthony J. Appl. Phys. 89 2001 5243
30. E.P. Gusev, V. Narayanan, and M.M. Frank IBM J. Res. & Dev. 50 2006 387 410
31. H. Takeuchi, D. Ha, and T.J. King J. Vac. Sci. Tech. A 22 2004 1337 1341
32. S. Guha, and V. Narayanan Phys. Rev. Lett. 98 2007 196101
33. P. Broqvist, and A. Pasquarello Appl. Phys. Lett. 89 2006 262904
34. P.C. McIntyre ECS Trans. 11 2007 235 249
35. P.J. Linstrom, and W.G. Mallard NIST Chemistry WebBook 2009 National Institute of Standards and Technology Gaithersburg, MD
36. J. Robertson Rep. Prog. Phys. 69 2006 327 396
37. E.J. Kim, L. Wang, P.M. Asbeck, K.C. Saraswat, and P.C. McIntyre Appl. Phys. Lett. 96 2010 012906
38. B. Shin, J.R. Weber, R.D. Long, P.K. Hurley, C.G. de Walle, and P.C. McIntyre Appl. Phys. Lett. 96 2010 152908
39. G.W. Paterson, S.J. Bentley, M.C. Holland, I.G. Thayne, J. Ahn, R.D. Long, P.C. McIntyre, and A.R. Long J. Appl. Phys. 111 2012 104112
40. J. Hu, and H.-S.P. Wong J. Appl. Phys. 111 2012 044105
41. Y.C. Chang, W.H. Chang, H.C. Chiu, L.T. Tung, C.H. Lee, K.H. Shiu, M. Hong, J. Kwo, J.M. Hong, and C.C. Tsai Appl. Phys. Lett. 93 2008 053504
42. N. Nepal, N.Y. Garces, D.J. Meyer, J.K. Hite, M.A. Mastro, and C.R. Eddy Jr. Appl. Phys. Express 4 2011 055802
43. J.R. Weber, A. Janotti, and C.G. Van de Walle Microelectron. Eng. 86 2009 1756 1759
44. J.R. Weber, A. Janotti, and C.G. Van de Walle J. Appl. Phys. 109 2011 033715
45. C.G. Van de Walle, and J. Neugebauer Nature 423 2003 626 628
46. P.E. Blöchl, and J.H. Stathis Phys. Rev. Lett. 83 1999 372 375
47. P.E. Blöchl, and J.H. Stathis Physica B 273-274 1999 1022 1026
48. M.B. Zahid, D. Ruiz Aguado, R. Degraeve, W.C. Wang, B. Govoreanu, M. Toledano-Luque, V.V. Afanas+ev, and J. Van Houdt IEEE Trans. El. Dev. 57 2010 2907 2916