메뉴 건너뛰기




Volumn 30, Issue 13, 2014, Pages 3741-3748

Atmospheric pressure atomic layer deposition of Al2O3 using trimethyl aluminum and ozone

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATMOSPHERIC PRESSURE; BATCH DATA PROCESSING; DEPOSITION; OZONE; SURFACE REACTIONS;

EID: 84897985890     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la500796r     Document Type: Article
Times cited : (38)

References (32)
  • 2
    • 79952312122 scopus 로고    scopus 로고
    • Atomic layer deposition on polymer based flexible packaging materials: Growth characteristics and diffusion barrier properties
    • Kääriäinen, T. O.; Maydannik, P.; Cameron, D. C.; Lahtinen, K.; Johansson, P.; Kuusipalo, J. Atomic layer deposition on polymer based flexible packaging materials: Growth characteristics and diffusion barrier properties Thin Solid Films 2011, 519, 3146-3154
    • (2011) Thin Solid Films , vol.519 , pp. 3146-3154
    • Kääriäinen, T.O.1    Maydannik, P.2    Cameron, D.C.3    Lahtinen, K.4    Johansson, P.5    Kuusipalo, J.6
  • 3
    • 84858028341 scopus 로고    scopus 로고
    • High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
    • Dickey, E.; Barrow, W. A. High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films J. Vac. Sci. Technol., A 2012, 30, 021502-1-021502-5
    • (2012) J. Vac. Sci. Technol., A , vol.30 , pp. 0215021-0215025
    • Dickey, E.1    Barrow, W.A.2
  • 4
    • 84855612491 scopus 로고    scopus 로고
    • Low temperature and roll-to-roll spatial atomic layer deposition for flexible electronics
    • Poodt, P.; Knaapen, R.; Illiberi, A.; Roozeboom, F.; van Asten, A. Low temperature and roll-to-roll spatial atomic layer deposition for flexible electronics J. Vac. Sci. Technol., A 2012, 30, 01A142-1-01A142-5
    • (2012) J. Vac. Sci. Technol., A , vol.30
    • Poodt, P.1    Knaapen, R.2    Illiberi, A.3    Roozeboom, F.4    Van Asten, A.5
  • 5
    • 77955720046 scopus 로고    scopus 로고
    • High-speed spatial atomic-layer deposition of aluminum oxide layers for solar cell passivation
    • Poodt, P.; Lankhorst, A.; Roozeboom, F.; Spee, K.; Maas, D.; Vermeer, A. High-speed spatial atomic-layer deposition of aluminum oxide layers for solar cell passivation Adv. Mater. 2010, 22, 3564-3567
    • (2010) Adv. Mater. , vol.22 , pp. 3564-3567
    • Poodt, P.1    Lankhorst, A.2    Roozeboom, F.3    Spee, K.4    Maas, D.5    Vermeer, A.6
  • 6
    • 85008002412 scopus 로고    scopus 로고
    • Oxide electronics by spatial atomic layer deposition
    • Levy, D. H.; Nelson, S. F.; Freeman, D. Oxide electronics by spatial atomic layer deposition J. Disp. Technol. 2009, 5, 484-494
    • (2009) J. Disp. Technol. , vol.5 , pp. 484-494
    • Levy, D.H.1    Nelson, S.F.2    Freeman, D.3
  • 7
    • 27744468219 scopus 로고    scopus 로고
    • Functionalisation of textiles by inorganic sol-gel coatings
    • Mahltig, B.; Haufe, H.; Boettcher, H. Functionalisation of textiles by inorganic sol-gel coatings J. Mater Chem. 2005, 15, 4385-4398
    • (2005) J. Mater Chem. , vol.15 , pp. 4385-4398
    • Mahltig, B.1    Haufe, H.2    Boettcher, H.3
  • 9
    • 0344667722 scopus 로고    scopus 로고
    • Atomic layer deposition chemistry: Recent developments and future challenges
    • Leskela, M.; Ritala, M. Atomic layer deposition chemistry: recent developments and future challenges Angew. Chem. Int. Ed. 2003, 42, 5548-5554
    • (2003) Angew. Chem. Int. Ed. , vol.42 , pp. 5548-5554
    • Leskela, M.1    Ritala, M.2
  • 12
    • 84855609774 scopus 로고    scopus 로고
    • 3 and ZnO at atmospheric pressure in a flow tube reactor
    • 3 and ZnO at atmospheric pressure in a flow tube reactor ACS Appl. Mater. Interfaces 2011, 3, 299-308
    • (2011) ACS Appl. Mater. Interfaces , vol.3 , pp. 299-308
    • Jur, J.S.1    Parsons, G.N.2
  • 13
    • 84855600443 scopus 로고    scopus 로고
    • Effect of temperature and gas velocity on growth per cycle during Al2O3 and ZnO atomic layer deposition at atmospheric pressure
    • Mousa, M. B. M.; Oldham, C. J.; Jur, J. S.; Parsons, G. N. Effect of temperature and gas velocity on growth per cycle during Al2O3 and ZnO atomic layer deposition at atmospheric pressure J. Vac. Sci. Technol., A 2012, 30, 01A155-1-01A155-6
    • (2012) J. Vac. Sci. Technol., A , vol.30
    • Mousa, M.B.M.1    Oldham, C.J.2    Jur, J.S.3    Parsons, G.N.4
  • 14
    • 0037457846 scopus 로고    scopus 로고
    • FT-IR study of water adsorption on aluminum oxide surfaces
    • Al-Abadleh, H. A.; Grassian, V. H. FT-IR study of water adsorption on aluminum oxide surfaces Langmuir 2003, 19, 341-347
    • (2003) Langmuir , vol.19 , pp. 341-347
    • Al-Abadleh, H.A.1    Grassian, V.H.2
  • 15
    • 80052415917 scopus 로고    scopus 로고
    • Impact of parasitic reactions on wafer-scale uniformity in water-based and ozone-based atomic layer deposition
    • Henn-Lecordier, L.; Anderle, M.; Robertson, E.; Rubloff, G. W. Impact of parasitic reactions on wafer-scale uniformity in water-based and ozone-based atomic layer deposition J. Vac. Sci. Technol., A 2011, 29, 051509-1-051509-8
    • (2011) J. Vac. Sci. Technol., A , vol.29 , pp. 0515091-0515098
    • Henn-Lecordier, L.1    Anderle, M.2    Robertson, E.3    Rubloff, G.W.4
  • 21
    • 64349109641 scopus 로고    scopus 로고
    • 3 atomic layer deposition with trimethylaluminum and ozone studied by in situ transmission FTIR spectroscopy and quadrupole mass spectrometry
    • 3 atomic layer deposition with trimethylaluminum and ozone studied by in situ transmission FTIR spectroscopy and quadrupole mass spectrometry J Phys Chem C. 2008, 112, 19530-19539
    • (2008) J Phys Chem C. , vol.112 , pp. 19530-19539
    • Goldstein, D.N.1    McCormick, J.A.2    George, S.M.3
  • 23
    • 33748258535 scopus 로고    scopus 로고
    • Ozone-based atomic layer deposition of alumina from TMA: Growth, morphology, and reaction mechanism
    • Elliott, S. D.; Scarel, G.; Wiemer, C.; Fanciulli, M.; Pavia, G. Ozone-based atomic layer deposition of alumina from TMA: growth, morphology, and reaction mechanism Chem. Mater. 2006, 18, 3764-37673
    • (2006) Chem. Mater. , vol.18 , pp. 3764-37673
    • Elliott, S.D.1    Scarel, G.2    Wiemer, C.3    Fanciulli, M.4    Pavia, G.5
  • 24
    • 13844256778 scopus 로고    scopus 로고
    • Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
    • Ha, S-C; Choi, E.; Kim, S-H; Sung Roh, J. Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate Thin Solid Films 2005, 476, 252-257
    • (2005) Thin Solid Films , vol.476 , pp. 252-257
    • Ha, S.-C.1    Choi, E.2    Kim, S.-H.3    Sung Roh, J.4
  • 26
    • 0036685058 scopus 로고    scopus 로고
    • Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition
    • Elam, J. W.; Groner, M. D.; George, S. M. Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition Rev. Sci. Instrum. 2002, 73, 2981-2987
    • (2002) Rev. Sci. Instrum. , vol.73 , pp. 2981-2987
    • Elam, J.W.1    Groner, M.D.2    George, S.M.3
  • 27
    • 36849132560 scopus 로고
    • Mechanism of the gas phase, thermal decomposition of ozone
    • Benson, S. W.; Axworthy, A. E. Mechanism of the gas phase, thermal decomposition of ozone J. Chem. Phys. 1957, 26, 1718-1726
    • (1957) J. Chem. Phys. , vol.26 , pp. 1718-1726
    • Benson, S.W.1    Axworthy, A.E.2
  • 30
    • 77957968445 scopus 로고    scopus 로고
    • Surface reaction mechanisms during ozone and oxygen plasma assisted atomic layer deposition of aluminum oxide
    • Rai, V. R.; Vandalon, V.; Agarwal, S. Surface reaction mechanisms during ozone and oxygen plasma assisted atomic layer deposition of aluminum oxide Langmuir 2010, 26, 13732-13735
    • (2010) Langmuir , vol.26 , pp. 13732-13735
    • Rai, V.R.1    Vandalon, V.2    Agarwal, S.3
  • 31
    • 84855703499 scopus 로고    scopus 로고
    • Influence of surface temperature on the mechanism of atomic layer deposition of aluminum oxide using an oxygen plasma and ozone
    • Rai, V. R.; Vandalon, V.; Agarwal, S. Influence of surface temperature on the mechanism of atomic layer deposition of aluminum oxide using an oxygen plasma and ozone Langmuir 2012, 28, 350-357
    • (2012) Langmuir , vol.28 , pp. 350-357
    • Rai, V.R.1    Vandalon, V.2    Agarwal, S.3
  • 32
    • 45749104689 scopus 로고    scopus 로고
    • Detection of a formate surface intermediate in the atomic layer deposition of high-κ dielectrics using ozone
    • Kwon, J.; Dai, M.; Halls, M. D.; Chabal, Y. J. Detection of a formate surface intermediate in the atomic layer deposition of high-κ dielectrics using ozone Chem. Mater. 2008, 20, 3248-3250
    • (2008) Chem. Mater. , vol.20 , pp. 3248-3250
    • Kwon, J.1    Dai, M.2    Halls, M.D.3    Chabal, Y.J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.