Comparison between Al2O3 thin films grown by ALD using H2O or O3 as oxidant source

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

Volumn , Issue , 2011, Pages

  Campabadal, F ^a   Beldarrain, O ^a   Zabala, M ^a   Acero, M C ^a   Rafi, J M ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

Al2O3; ALD; Ozone

Indexed keywords

AL2O3; ALD; DEPOSITED LAYER; ELECTRICAL CHARACTERIZATION; FORMING GAS; OXIDANT SOURCES; OXYGEN PRECURSORS; POST-DEPOSITION ANNEAL; POST-METALLIZATION ANNEALING; SILICON SUBSTRATES;

ALUMINUM; ATOMIC LAYER DEPOSITION; DEFECT DENSITY; DEFECTS; DEPOSITION; ELECTRON DEVICES; OZONE; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; VAPOR DEPOSITION;

OZONE LAYER;

EID: 79955737773     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCED.2011.5744238     Document Type: Conference Paper

References (16)

1. G. D. Wilk, R. M. Wallace and J. M. Anthony, "High-k gate dielectrics: Current status and materials properties considerations", J. Appl. Phys., vol. 89, pp. 5243-5275, 2001. (Pubitemid 33598307)
2. H. Wong and H. Iwai, "On the scaling issues and high-k replacement of ultrathin gate dielectrics for nanoscale MOS transistors", Microelectron. Eng. vol. 83, pp. 1867-1904, 2006.
3. D. A. Buchanan et al., "80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications", Tech. Dig. Int. Electron. Devices Meet. (IEDM 2000) p. 223, 2000.
4. F. Fishburn et al., "A highly manufacturable 110nm EDRAM process with Al2O3 stack MIM capacitor for cost effective high density, high speed, low voltage ASIC memory applications", 2003 Symp. on VLSI Tech. Dig. of Tech. Papers, p. 75, 2003.
5. S. Sarkar, J. H. Culp, J. T. Whyland, M. Garvan and, V. Misra, "Encapsulation of organic solar cells with ultrathin barrier layers deposited by ozone-based atomic layer deposition", Org. Electron. vol. 11, pp. 1896-1900, 2010.
6. B. Hoex, et al., "Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3", Appl. Phys. Lett. vol. 91, p. 112107, 2007.
7. T. M. Mayer, J. W. Elam, S. M. George, P. G. Kotula and, R. S. Goeke, "Atomic-layer deposition of wear-resistant coatings for microelectromechanical devices", Appl. Phys. Lett. vol 82, pp. 2883-2885, 2003.
8. R. L. Puurunen, "Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process", J. Appl. Phys. vol. 97, p. 121301, 2005.
9. J. B. Kim, D. R. Kwon, K. Chakrabarti, C. Lee, K. Y. Oh, and J. H. Lee, "Improvement in Al2O3 dielectric behavior by using ozone as an oxidant for the atomic layer deposition technique", J. Appl. Phys. vol. 92, pp. 6739-6742, 2002.
10. S. K. Kim, S. W. Lee, C. S. Hwang, Y-S. Min, J. Y. Won, and J. Jeong, "Low temperature (<100°C) deposition of aluminum oxide thin films by ALD with O3 as oxidant J. Electrochem. Soc. 2006 153 F69-F76.
11. S. D. Elliot, G. Scarel, C. Wiemer, M. Fanciulli, and G. Pavia, "Ozonebased atomic layer deposition of alumina from TMA: Growth, morphology, and reaction mechanism", Chem. Mater. vol 18, pp. 3764-3773, 2006. (Pubitemid 44318557)
12. S.-C. Ha, E. Choi, S.-H. Kim, and J. S. Roh, "Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogenterminated Si substrate", Thin Solid Films, vol. 476, pp. 252-257, 2005. (Pubitemid 40245066)
13. S. Jakschik et al., "Physical characterization of thin ALD-Al2O3 films", Appl. Surf. Sci. vol 211, pp. 352-359, 2003.
14. R. S. Johnson, J. G. Hong, C. Hinkle, and G. Lucovsky, "Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications", J. Vac. Sci. Technol. B vol. 20, pp. 1126-1130, 2002.
15. 2 films", ECS Trans. vol. 28, no. 2, pp. 213-221, 2010.
16. 2 on p and n silicon", J. Appl. Phys. vol. 96, pp. 1365-1372, 2004.