A comprehensive graphene FET model for circuit design

IEEE Transactions on Electron Devices

Volumn 61, Issue 4, 2014, Pages 1199-1206

  Rodriguez, Saul ^a   Vaziri, Sam ^a   Smith, Anderson ^a   Fregonese, Sebastien ^b,c   Ostling, Mikael ^a   Lemme, Max C ^d   Rusu, Ana ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b CNRS   (France)

^c UNIVERSITÉ DE BORDEAUX   (France)

^d UNIVERSITY OF SIEGEN   (Germany)

Author keywords

Analytic model; field effect transistor (FET); graphene

Indexed keywords

ANALOG CIRCUITS; ANALYTICAL MODELS; CAPACITANCE; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; GRAPHENE; HETEROJUNCTION BIPOLAR TRANSISTORS; MODELS; TRANSCONDUCTANCE;

ANALYTIC MODELING; ANALYTICAL EXPRESSIONS; CIRCUIT SIMULATORS; ELECTRICAL CHARACTERISTIC; INTRINSIC VOLTAGE GAINS; OPERATING REGIONS; PARASITIC CAPACITANCE; TRANSCONDUCTANCE EFFICIENCY;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 84897916636     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2302372     Document Type: Article

References (28)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, et al., "Electric field effect in atomically thin carbon films," Science, vol. 306, no. 5696, pp. 666-669, 2004. (Pubitemid 39440910)
2. J. Chen, C. Jang, and S. Xiao, "Intrinsic and extrinsic performance limits of graphene devices on SiO2," Nature Nanotechnol., vol. 3, no. 4, pp. 206-209, 2008. (Pubitemid 351499398)
3. F. Schwierz, "Graphene transistors," Nature Nanotechnol., vol. 5, no. 7, pp. 487-96, Jul. 2010.
4. M. C. Lemme, T. J. Echtermeyer, M. Baus, and H. Kurz, "A graphene field-effect device," IEEE Electron Device Lett., vol. 28, no. 4, pp. 282-284, Apr. 2007.
5. Y. Wu, D. Farmer, A. Valdes-Garcia, W. Zhu, K. Jenkins, C. Dimitrakopoulos, et al., "Record high RF performance for epitaxial graphene transistors," in Proc. IEEE IEDM, Sep. 2011, pp. 23.8.1-23.8.3.
6. Y.-M. Lin, S. Member, D. B. Farmer, K. A. Jenkins, Y. Wu, J. L. Tedesco, et al., "Enhanced performance in epitaxial graphene FETs with optimized channel morphology," IEEE Electron Device Lett., vol. 32, no. 10, pp. 1343-1345, Oct. 2011.
7. L. Liao, Y.-C. Lin, M. Bao, R. Cheng, J. Bai, Y. Liu, et al., "Highspeed graphene transistors with a self-aligned nanowire gate," Nature, vol. 467, no. 7313, pp. 305-308, Sep. 2010.
8. J. S. Moon, M. Antcliffe, H. C. Seo, D. Curtis, S. Lin, A. Schmitz, et al., "Ultra-low resistance ohmic contacts in graphene field effect transistors," Appl. Phys. Lett., vol. 100, no. 20, pp. 203512-1-203512-3, 2012.
9. J. Moon, D. Curtis, S. Bui, M. Hu, D. Gaskill, J. Tedesco, et al., "Top-gated epitaxial graphene FETs on Si-face SiC wafers with a peak transconductance of 600 mS/mm," IEEE Electron Device Lett., vol. 31, no. 4, pp. 260-262, Apr. 2010.
10. I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, "Current saturation in zero-bandgap, top-gated graphene field-effect transistors," Nature Nanotechnol., vol. 3, no. 11, pp. 654-659, Nov. 2008.
11. B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, "Current saturation and voltage gain in bilayer graphene field effect transistors," Nano Lett., vol. 12, no. 3, pp. 1324-1328, Mar. 2012.
12. J. S. Moon, H.-C. Seo, F. Stratan, M. Antcliffe, A. Schmitz, R. S. Ross, et al., "Lateral graphene heterostructure field-effect transistor," IEEE Electron Device Lett., vol. 34, no. 9, pp. 1190-1192, Sep. 2013.
13. S. Rodriguez, S. Vaziri, M. Ostling, A. Rusu, E. Alarcon, and M. Lemme, "RF performance projections of graphene FETs vs. Silicon MOSFETs," ECS Solid State Lett., vol. 1, no. 5, pp. 39-41, 2012.
14. K. L. Shepard, I. Meric, and P. Kim, "Characterization and modeling of graphene field-effect devices," in Proc. IEEE/ACM ICCAD, Nov. 2008, pp. 406-411.
15. S. Thiele, J. Schaefer, and F. Schwierz, "Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels," J. Appl. Phys., vol. 107, no. 9, pp. 094505-1-094505-8, 2010.
16. D. Jimenez and O. Moldovan, "Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications," IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 4049-4052, Nov. 2011.
17. O. Habibpour, S. Cherednichenko, J. Vukusic, and J. Stake, "Mobility improvement and microwave characterization of a graphene field effect transistor with silicon nitride gate dielectrics," IEEE Electron Device Lett., vol. 32, no. 7, pp. 871-873, Jul. 2011.
18. S. Fregonese, N. Meng, H.-N. Nguyen, C. Majek, C. Maneux, H. Happy, et al., "Electrical compact modeling of graphene transistors," Solid-State Electron., vol. 73, pp. 27-31, Apr. 2012.
19. S. Fregonese, M. Magallo, C. Maneux, H. Happy, and T. Zimmer, "Scalable electrical compact modeling for graphene FET transistors," IEEE Trans. Nanotechnol., vol. 12, no. 4, pp. 539-546, Jul. 2013.
20. I. Meric, C. Dean, A. Young, J. Hone, P. Kim, and K. L. Shepard, "Graphene field-effect transistors based on boron nitride gate dielectrics graphene," in Proc. IEEE IEDM, Dec. 2010, pp. 556-559.
21. J. Kedzierski, A. Reina, P. Healey, P. Wyatt, and C. Keast, "Grapheneon- insulator transistors made using C on Ni chemical-vapor deposition," IEEE Electron Device Lett., vol. 30, no. 7, pp. 745-747, Jul. 2009.
22. H. Shichman and D. A. Hodges, "Modeling and simulation of insulatedgate field-effect transistor switching circuits," IEEE J. Solid-State Circuits, vol. 3, no. 3, pp. 285-289, Sep. 1968.
23. J. J. Ebers and J. L. Moll, "Large-signal behavior of junction transistors," Proc. IRE, vol. 42, no. 12, pp. 1761-1772, Dec. 1954.
24. S. Han, Z. Chen, and A. Bol, "Channel-length-dependent transport behaviors of graphene field-effect transistors," IEEE Electron Device Lett., vol. 32, no. 6, pp. 812-814, Jun. 2011.
25. A. Venugopal, J. Chan, X. Li, C. W. Magnuson, W. P. Kirk, L. Colombo, et al., "Effective mobility of single-layer graphene transistors as a function of channel dimensions," J. Appl. Phys., vol. 109, no. 10, pp. 104511-1-104511-5, 2011.
26. I. Meric, C. R. Dean, A. F. Young, N. Baklitskaya, N. J. Tremblay, C. Nuckolls, et al., "Channel length scaling in graphene field-effect transistors studied with pulsed current-voltage measurements," Nano Lett., vol. 11, no. 3, pp. 1093-1097, Mar. 2011.
27. Y. Wu, D. B. Farmer, W. Zhu, S.-J. Han, C. D. Dimitrakopoulos, A. A. Bol, et al., "Three-terminal graphene negative differential resistance devices," ACS Nano, vol. 6, no. 3, pp. 2610-2166, Mar. 2012.
28. R. Grassi, T. Low, A. Gnudi, and G. Baccarani, "Contact-induced negative differential resistance in short-channel graphene FETs, " IEEE Trans. Electron Devices, vol. 60, no. 1, pp. 140-146, Jan. 2013.