Enhanced performance in epitaxial graphene FETs with optimized channel morphology

IEEE Electron Device Letters

Volumn 32, Issue 10, 2011, Pages 1343-1345

  Lin, Yu Ming ^a   Farmer, Damon B ^a   Jenkins, Keith A ^a   Wu, Yanqing ^a   Tedesco, Joseph L ^b   Myers Ward, Rachael L ^b   Eddy Jr , Charles R ^b   Gaskill, D Kurt ^b   Dimitrakopoulos, Christos ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Field effect transistor (FET); graphene; radio frequency (RF)

Indexed keywords

ACCESS RESISTANCE; CHANNEL LENGTH; CHANNEL MORPHOLOGY; ENHANCED PERFORMANCE; EPITAXIAL GRAPHENE; RADIO FREQUENCIES; SIC SUBSTRATES; STEP EDGE; TERRACE STRUCTURE;

CARRIER MOBILITY; CUTOFF FREQUENCY; EPITAXIAL GROWTH; LANDFORMS; MESFET DEVICES; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

GRAPHENE;

EID: 80053560287     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2162934     Document Type: Article

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